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Total 3274 products for dynamic random access memory Manufacture & Suppliers

MX29LV640EBTI-70G Flash Memory Chips - High Speed, Low Power Consumption for Data Storage

...Memory Chips Product Features: - 70nm process technology - 4M-bit capacity (512K x 8) - Low voltage operation: 1.65 to 1.95V - Access time: 70ns (max) - Single power supply - Fast page mode operation up to 3...

Shenzhen Sai Collie Technology Co., Ltd.
China

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Integrated Circuit Chip MT25QU01GBBB8E12-0SIT 24-TBGA FLASH - NOR Memory IC

...Memory IC Product Description Of MT25QU01GBBB8E12-0SIT MT25QU01GBBB8E12-0SIT's nonvolatile locking configuration can also be locked, as well password-protected. MT25QU01GBBB8E12-0SIT's twin-quad serial NOR i...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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M29W640FB Programming Ic Chips 64 Mbit (8Mb x8 or 4Mb x16 , Page , Boot Block ) 3V Supply Flash Memory

... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memo...

Anterwell Technology Ltd.
Guangdong,China

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K6R4008C1D-KI10 Samsung- 256Kx16 Bit High Speed Static RAM Flash Memory IC Chip

... at Commercial and Industrial Temperature Ranges. Description: The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common in...

Mega Source Elec.Limited
China

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MX30LF1G08AA-TI Flash Memory Chip High Speed Low Power Storage Capacity

.... It features a 100-pin TSOP2 package, a 3V voltage level, and a wide range of read, program, and erase functions. The device has a random access time of 90ns, a data retention period of 10 years, and a writ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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S29GL512P12TFIV20 - SPANSION - 1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory

...Memory featuring 90 nm MirrorBit Process Technology Description: The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page acces...

Mega Source Elec.Limited
China

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Integrated Circuit Chip MT25QL02GCBB8E12-0AAT 2Gbit SPI 133 MHz Memory IC

...application, saves instruction overhead, and reduces random access time. Specification Of MT25QL02GCBB8E12-0AAT Part Number MT25QL02GCBB8E12-0AAT Memory Size: 2 Gbit Interface Type: SPI Maximum Clock Frequen...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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FM24CL64B-GTR 64Kb I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp and 8-lead TSSOP

... I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp andamp; 8-lead TSSOP andnbsp; Features ■ 64-Kbit ferroelectric random access memory (F-RAM) logically...

TOP Electronic Industry Co., Ltd.
China

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A623308M-70SF Integrated Circuit Chip 8K X 8 BIT CMOS SRAM memory IC

...: 35mA (max.) Standby: 15mA (max.) General Description The A623308 is a low operating current 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates on a single 5V power suppl...

Anterwell Technology Ltd.
Guangdong,China

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CY62137FV30LL-55ZSXE IC Chip for Low Power SRAM Memory Storage Solutions

...-power, high-performance Static Random Access Memory (SRAM) that features a 1.8V operating voltage and a 3V data retention voltage. It is available in 4Mb and 8Mb densities with a low-power ......

Shenzhen Sai Collie Technology Co., Ltd.
China

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FM25V10-GTR IC Chip Non Volatile Memory High Performance Data Storage

... Circuit IC Chip is a non-volatile ferroelectric random access memory (F-RAM) device. It features a unique combination of high performance, low power consumption and high endurance, making it an ideal choice...

Shenzhen Sai Collie Technology Co., Ltd.
China

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IC FM24W256-G Replace EEPROM Memory FRAM IC SOP8 256k Integrated Circuits Electronic Component New and original IC

...memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 ye...

Shenzhen Quanyuantong Electronics Co., Ltd.

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200MHz Pseudo SRAM Memory IC S80KS5122GABHI020 FBGA24 Integrated Circuit Chip

...DRAM) Memory Chip with HYPERBUS™ interface. Specification Of S80KS5122GABHI020 Part Number: S80KS5122GABHI020 Wrapped Burst Lengths: 64 Bytes (32 Clocks) Linear Burst: 64 Mb Technology: PSRAM (Pseudo SRAM) A...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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MT41K128M8DA-107 J Flash Memory Chips High-Performance Storage

... of 1.8V to 3.6V • Dual power supply of 1.7V to 1.95V for core and I/O • 1.8V I/O support • Power-down and deep power-down modes • Fast random read access •...

Shenzhen Sai Collie Technology Co., Ltd.
China

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Dynamic Random Access Memory

Total 3274 products for dynamic random access memory Manufacture & Suppliers