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Dynamic Random Access Memory

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Total 3364 products for dynamic random access memory Manufacture & Suppliers

4Mbit SPI 20 MHz Ferroelectric RAM Memory IC CY15B104QI-20LPXC Surface Mount

4Mbit SPI 20 MHz Ferroelectric RAM Memory IC CY15B104QI-20LPXC Surface Mount Product Description Of CY15B104QI-20LPXC CY15B104QI-20LPXC ferroelectric random access memory or F-RAM is nonvolatile and performs re...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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256Mbit Integrated Circuit Chip S29GL256S90DHI020 FLASH NOR Memory IC FBGA64

...Memory IC FBGA64 Product Description Of S29GL256S90DHI020 S29GL256S90DHI020 is MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. S29GL256S90DHI020 offer a fast page access time as fa...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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AT24CS08-STUM-T 8 Kbit Serial EEPROM Memory for High Performance Data Storage

...Memory for High Performance Data Storage Product Description: The AT24CS08-STUM-T is a Flash Memory chip that provides 8-Kbit of memory in a small, low-power 8-pin package. It features an I2C® serial interfa...

Shenzhen Sai Collie Technology Co., Ltd.
China

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S29GL256S10DHB023 Memory IC Chip 256 Mbit NOR Flash Memory FBGA-64 Package

... technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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S29GL01GS10FHI010 Memory IC Chip 1Gbit Parallel MIRRORBIT™ Eclipse NOR Flash Memory IC

... on 65-nm process technology. It offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. S29GL01GS10FHI010 feature a Write Buffer that allows a maximum of 256...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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FM24C256-SE - Ramtron International Corporation - 256Kb FRAM Serial Memory

...Memory Description: The FM24C256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes lik...

Mega Source Elec.Limited
China

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AM28F010-90PC - Advanced Micro Devices - 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

...memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erase...

Mega Source Elec.Limited
China

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MX29LV040TC-55 - Macronix International - 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY

...EQUAL SECTOR FLASH MEMORY Description: The MX29LV040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile ra...

Mega Source Elec.Limited
China

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FM25L256-G EMMC Memory Chips 256 Kbit

... memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems c...

Walton Electronics Co., Ltd.
China

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FM24CL04B-GTR 4 - Kbit Non Volatile Memory , FRAM Serial Flash Memory Fast I2C Interface

... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, ......

ChongMing Group (HK) Int'l Co., Ltd
China

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MT41K128M16JT-125 IT:K High Performance Flash Memory Chips Unbeatable Speed and Reliability

...: TSOP • VDD: 1.8V • Operating Temperature: -40C to +85C • Organization: x16 • Features: low latency, high speed random access, fast read and write times, high reliability and endurance • Access Time: 20ns W...

Shenzhen Sai Collie Technology Co., Ltd.
China

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FM1608-120 - Ramtron International Corporation - 64Kb Bytewide FRAM Memory

Quick Detail: 64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but op...

Mega Source Elec.Limited
China

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F-RAM Flash Memory Chip FM25CL64B-GTR Low Power Consumption 64Kb Serial 3V

... random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, ......

ChongMing Group (HK) Int'l Co., Ltd
China

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FM16W08-SGTR Integrated Circuit IC Chip - 8Kb EEPROM Memory With SPI Interface

... Random Access Memory (SRAM) in space-saving 8-pin plastic SOP package with an access time of 15ns. Features: • Low power consumption • Wide voltage range: 1.8V to 3.6V • High performance: 15ns access time •...

Shenzhen Sai Collie Technology Co., Ltd.
China

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CY62167EV30LL-45BVXI IC Chip High Performance SRAM Fast Access Time Low Power Consumption

...: Memory Function: SRAM (Static Random Access Memory) Interface: Serial/Parallel Data Width: 32-bit Organization: 16K x 32 Speed: 45 MHz Mounting Type: ......

Shenzhen Sai Collie Technology Co., Ltd.
China

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Reliance Electric 57C423 AutoMax Multibus system Common Memory Module 128K Memory Made in USA

... Function Common Memory Module Memory Capacity 128K Memory Memory Type Typically static random-access memory (SRAM) The Reliance Electric 57C423 Common Memory Module with 128K Memory is versatile and finds a...

Joyoung International Trading Co.,Ltd
Fujian,China

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MX29LV640EBTI-70G Flash Memory Chips - High Speed, Low Power Consumption for Data Storage

...Memory Chips Product Features: - 70nm process technology - 4M-bit capacity (512K x 8) - Low voltage operation: 1.65 to 1.95V - Access time: 70ns (max) - Single power supply - Fast page mode operation up to 3...

Shenzhen Sai Collie Technology Co., Ltd.
China

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Integrated Circuit Chip MT25QU01GBBB8E12-0SIT 24-TBGA FLASH - NOR Memory IC

...Memory IC Product Description Of MT25QU01GBBB8E12-0SIT MT25QU01GBBB8E12-0SIT's nonvolatile locking configuration can also be locked, as well password-protected. MT25QU01GBBB8E12-0SIT's twin-quad serial NOR i...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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K6R4008C1D-KI10 Samsung- 256Kx16 Bit High Speed Static RAM Flash Memory IC Chip

... at Commercial and Industrial Temperature Ranges. Description: The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common in...

Mega Source Elec.Limited
China

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M29W640FB Programming Ic Chips 64 Mbit (8Mb x8 or 4Mb x16 , Page , Boot Block ) 3V Supply Flash Memory

... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memo...

Anterwell Technology Ltd.
Guangdong,China

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