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P Type ,LEC InSb(Indium Antimonide) Wafer , 2”, Prime Grade , Epi Ready

    Buy cheap P Type ,LEC InSb(Indium Antimonide) Wafer , 2”, Prime Grade , Epi Ready from wholesalers
     
    Buy cheap P Type ,LEC InSb(Indium Antimonide) Wafer , 2”, Prime Grade , Epi Ready from wholesalers
    • Buy cheap P Type ,LEC InSb(Indium Antimonide) Wafer , 2”, Prime Grade , Epi Ready from wholesalers

    P Type ,LEC InSb(Indium Antimonide) Wafer , 2”, Prime Grade , Epi Ready

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    Brand Name : PAM-XIAMEN
    Payment Terms : T/T
    Supply Ability : 10,000 wafers/month
    Delivery Time : 5-50 working days
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    P Type ,LEC InSb(Indium Antimonide) Wafer , 2”, Prime Grade , Epi Ready

    P Type ,LEC InSb(Indium Antimonide) Wafer , 2”, Prime Grade , Epi Ready


    PAM-XIAMEN provides single crystal InSb(Indium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. Indium Antimonide (InSb) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness.PAM-XIAMEN can provide epi ready grade InSb wafer for your MOCVD & MBE epitaxial application .


    Please contact our engineer team for more wafer information.

    P Type, InSb Wafer, 2”, Prime Grade, Epi Ready

    Wafer Specification
    ItemSpecifications
    Wafer Diameter

    2″50.5±0.5mm

    Crystal Orientation

    2″(111)AorB±0.1°

    Thickness2″625±25um
    Primary flat length

    2″16±2mm

    Secondary flat length

    2″8±1mm

    Surface FinishP/E, P/P
    PackageEpi-Ready,Single wafer container or CF cassette

    Electrical and Doping Specification
    Conduction Typep-type
    DopantGenmanium
    EPD cm-22″≤100
    Mobility cm² V-1s-18000-4000
    Carrier Concentration cm-35*1014-3*1015

    Thermal properties of InSb Wafer

    Bulk modulus4.7·1011 dyn cm-1
    Melting point527 °C
    Specific heat0.2 J g-1°C-1
    Thermal conductivity0.18 W cm-1 °C-1
    Thermal diffusivity0.16 cm2 s-1
    Thermal expansion, linear5.37·10-6 °C-1

    Temperature dependence of thermal conductivity n-InSb. Electron concentration at 78 K n (cm-3):
    1. 2·1014;
    2. 4.8·1016;
    3. 4·1018.

    Solid line shows the temperature dependence of thermal conductivity at high temperatures
    Temperature dependence of thermal conductivity p-InSb.
    Electron concentration at 78K p (cm-3):
    1. 2.7·1014;
    2. 5.3·1015;
    3. 7.2·1017;
    4. 6·1018.
    Temperature dependence of specific heat at constant pressure.
    Temperature dependence of linear expansion coefficient (low temperatures)
    Temperature dependence of linear expansion coefficient (high temperatures)
    Temperature dependence of Sb saturation vapor pressure

    Melting point Tm = 800K.

    Are You Looking for an InSb Wafer?

    PAM-XIAMEN is your go-to place for everything wafers, including InSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

    Product Tags:

    indium antimonide wafer

      

    as cut wafer

      
    Quality P Type ,LEC InSb(Indium Antimonide) Wafer , 2”, Prime Grade , Epi Ready for sale
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