N Type , InSb Wafer , 2”, Test Grade -Semiconductor Wafer
Manufacturing
PAM-XIAMEN provides single crystal InSb(Indium Antimonide) wafer
growth by Liquid Encapsulated Czochralski ( LEC ) method. Indium
Antimonide (InSb) can be supplied as wafers with as-cut, etched or
polished finishes and are available in a wide range of carrier
concentration, diameter and thickness.PAM-XIAMEN can provide epi
ready grade InSb wafer for your MOCVD & MBE epitaxial application .
Please contact our engineer team for more wafer information.
N Type, InSb Wafer, 2”, Test Grade
| Wafer Specification |
| Item | Specifications |
| Wafer Diameter |
2″50.5±0.5mm
|
| Crystal Orientation |
2″(111)AorB±0.1°
|
| Thickness |
2″625±25um
|
| Primary flat length |
2″16±2mm
|
| Secondary flat length |
2″8±1mm
|
| Surface Finish | P/E, P/P |
| Package | Epi-Ready,Single wafer container or CF cassette |
| Electrical and Doping Specification |
| Conduction Type | n-type | n-type | n-type | n-type |
| Dopant | Undoped | Tellurium | Low tellurium | High tellurium |
| EPD cm-2 | ≤50 |
| Mobility cm² V-1s-1 | ≥4*105 | ≥2.5*104 | ≥2.5*105 | Not Specified |
| Carrier Concentration cm-3 | 5*1013-3*1014 | (1-7)*1017 | 4*1014-2*1015 | ≥1*1018 |
Band structure and carrier concentration of InSb Wafer
Band structure and carrier concentration of InSb Wafer include Basic Parameters,Temperature, Dependences,Dependence of the Energy Gap on Hydrostatic
Pressure, Effective Masses, Donors and Acceptors
Basic Parameters
Temperature Dependences
Dependence of the Energy Gap on Hydrostatic
Pressure
Effective Masses
Donors and Acceptors
Basic Parameters
| Energy gap | 0.17 eV |
| Energy separation (EΓL) between Γ and L valleys | 0.51 eV |
| Energy separation (EΓX) between Γ and X valleys | 0.83 eV |
| Energy spin-orbital splitting | 0.80 eV |
| Intrinsic carrier concentration | 2·1016 cm-3 |
| Intrinsic resistivity | 4·10-3 Ω·cm |
| Effective conduction band density of states | 4.2·1016 cm-3 |
| Effective valence band density of states | 7.3·1018 cm-3 |
 | Band structure and carrier concentration of InSb 300 K
Eg = 0.17 eV
EL = 0.68 eV
EX= 1.0 eV
Eso = 0.8 eV |
Temperature Dependences
Temperature dependence of the energy gap
Eg = 0.24 - 6·10-4·T2/(T+500) (eV),
where T is temperatures in degrees K (0 < T < 300).
Effective density of states in the conduction band
Nc~ 8·1012·T3/2 (cm-3)
Effective density of states in the valence band
Nn ~ 1.4·1015·T3/2 (cm-3).
Intrinsic Carrier Concentration
ni = (Nc·Nν)1/2exp(-Eg/(2kbT))
For 200K < T < 800 K ni = 2.9·1011(2400 - T)3/4
·(1+2.7·10-4·T)·T3/2 ·exp(-(0.129 - 1.5·10-4T)/(2kbT)) (cm-3)
 | The temperature dependences of the intrinsic carrier concentration. |
 | Fermi level versus temperature for different concentrations of
shallow donors and acceptors. |
Dependences on Hydrostatic Pressure
Eg≈Eg(0) + 13.7·10-3P - 3.6·10-5P2 (eV)
EL≈EL(0) + 4.7·10-3P - 1.1·10-5P2 (eV)
EX≈EX(0) - 3.5·10-3P + 0.64·10-5P2 (eV),
where P is pressure in kbar.
Effective Masses
| Electrons: | |
| For Γ-valley | mΓ = 0.0.14mo |
Non-parabolicity:
E(1+αE) = h2k2/(2mΓ) | α = 4.1 (eV-1) |
| In the L-valley effective mass of density of states | mL=0.25mo |
 | Electron effective mass versus electron concentration
|
| Holes: | mh = 0.43mo |
| Heavy | mh = 0.43mo |
| Light | mlp = 0.015mo |
| Split-off band | mso = 0.19mo |
| Effective mass of density of states | mv = 0.43mo |
Donors and Acceptors
Ionization energies of shallow donors ~0.0007 (eV):
Se, S, Te.
Ionization energies of shallow acceptors (eV):
| Cd | Zn | Cr | Cu° | Cu- |
| 0.01 | 0.01 | 0.07 | 0.028 | 0.056 |
Are You Looking for an InSb substrate?
PAM-XIAMEN is proud to offer indium phosphide substrate for all
different kinds of projects. If you are looking for InSb wafers,
send us enquiry today to learn more about how we can work with you
to get you the InSb wafers you need for your next project. Our
group team is looking forward to providing both quality products
and excellent service for you!
