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TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERIN...
TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERIN...
TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURE Power Dissipation MARKING D882=Device code Solid dot = Green molding compound device, if none, the normal device XX=Code ORDERING INFORMATION...
TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN) FEATURE Ÿ Audio Amplifier Ÿ Flash Unit of Camera Ÿ Switching Circuit MARKING D965=Device code Solid dot=Green molding compound device, if none,the nor...
SOT-89-3L Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) FEATURE Ÿ Power dissipation MARKING A1015=Device code Solid dot=Green molding compound device, if none,the normal device Y=Rank of hFE, XXX=Cod...
TO-92 Plastic-Encapsulate Transistors D882S TRANSISTOR (NPN) FEATURE Power dissipation MARKING D882=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE, XXX=Code ORDERIN...
TO-92 Plastic-Encapsulate Transistors A733 TRANSISTOR (PNP) FEATURE Power dissipation MARKING A733=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE XXX=Code ORDERING ...
TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURE Power Dissipation MARKING D882=Device code Solid dot = Green molding compound device, if none, the normal device XX=Code ORDERING INFORMATION...
TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERIN...
TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP) FEATURE Low Speed Switching MARKING B772=Device code Solid dot = Green molding compound device, if none, the normal device XX=Code ORDERING INFORMATI...
...transistors (BRT) integrates a single transistor with a monolithic bias network, comprising a series base resistor and a base-emitter resistor. This design eliminates the need for external bias resistors, si...
...pleased to quote you our best price . Thank you ! A transistor is a semiconductor device that is used to amplify or switch electronic signals. A microcontroller IC is a semiconductor device that contains ele...
...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an ex...
...Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combi...
... utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applic...
...Transistors high power mosfet transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier Description The devices ar...
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to...
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to...
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to...
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to...