MT40A512M16HA-083E Flash Memory IC Dram 8 Gbit 512Mx16
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MT40A512M16HA-083E:A Memory ICs DRAM SDRAM - DDR4 SMD/SMT Tray • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV, +250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • Refresh time of 8192-cycle at TC temperature range: – 64ms......
Walton Electronics Co., Ltd.
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MT41K256M16TW-107:P Memory IC Chip 4 Gbit DDR3L SDRAM 16 bit 256 M x 16 FBGA96
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MT41K256M16TW-107:P Memory IC Chip 4Gbit DDR3L SDRAM Memory Chip FBGA96 Product Description Of MT41K256M16TW-107:P MT41K256M16TW-107:P is a 4Gbit, DDR3L Synchronous Dynamic Random Access Memory (SDRAM) Chips, it is a low voltage version of the DDR3 (1.5V......
ShenZhen Mingjiada Electronics Co.,Ltd.
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MT41K512M16HA-125 IT:A Memory IC Chip SDRAM DDR3 8Gbit 1600Hz FBGA96
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... Size: 8 Gbit Access Time: 13.5 ns Supply Voltage - Max: 1.283 V Supply Voltage - Min: 1.45 V Minimum Operating Temperature: - ......
Shenzhen Retechip Electronics Co., Ltd
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MT53E256M32D2DS-053 WT:B DRAM DRAM LPDDR4 256MX32 WFBGA
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DRAM DRAM LPDDR4 256MX32 WFBGA Product Attribute Attribute Value Select Attribute Manufacturer: Micron Technology Product Category: DRAM RoHS: Details Type: SDRAM Mobile - LPDDR4 Mounting Style: SMD/SMT Package / Case: VFBGA-200 Data Bus Width: 32 bit ......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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IC Integrated Circuits MT40A2G8SA-062E:F FBGA Memory & Data Storage
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IC Integrated Circuits MT40A2G8SA-062E:F FBGA Memory & Data Storage Specifications Product Attribute Attribute Value Manufacturer: Micron Technology Product Category: DRAM RoHS: Details Type: SDRAM - DDR4 Mounting Style: SMD/SMT Package / Case: FBGA Organization: 2 G x 8 Memory Size: 16 Gbit Packaging: Tray Brand: Micron Moisture Sensitive: Yes Product Type: DRAM......
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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K4A8G165WG-BCWE DDR4-3200 8Gb (512MX16) 0.620ns Samsung Semiconductor, Inc.SDRAM - DDR4 Memory IC 8Gbit Parallel 3200 Mbps 19 ns
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Product Attributes Filter Similar Products Show Empty Attributes Category Integrated Circuits (ICs) Memory Memory Memory Interface Parallel Mfr Samsung Semiconductor, Inc. Clock Frequency 3200 Mbps Packaging Tray Write Cycle Time - Word, Page 15ns Part ......
HK NeoChip Technology Limited
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DRAM Dynamic Random Access Memory 32G MT53D1024M32D4DT-053 AIT:D
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MT53D1024M32D4DT-053 AIT:D Micron DRAM LPDDR4 32G 1GX32 FBGA QDP VFBGA-200 MT53D1024M32D4DT-053 AIT:D TR MT53D1024M32D4DT-053 AAT:D MT53D1024M32D4DT-053 AAT:D TR Manufacturer: Micron Technology Product Type: Dynamic Random Access Memory Type: SDRAM Mobile......
Eastern Stor International Ltd.
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H5AN8G6NDJR-XNC
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H5AN8G6NDJR-XNC is a DDR4 Dynamic Random Access Memory (DRAM) chip produced by SK hynix. Here are the main parameters of this chip: Storage Capacity: Capacity: 8Gb (i.e., 1GB), achieved through its 512Mx16 architecture. Technical Specifications: Type: DDR4......
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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