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80a low voltage mosfet

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LT80N06AF 60V 80A N Channel Low Voltage MOSFET For Power Supplies

China LT80N06AF 60V 80A N Channel Low Voltage MOSFET For Power Supplies on sale
... performance with low power loss. This means that the device consumes less power, and is highly efficient in delivering power across various applications. This is a critical feature for applications that ......
Guangdong Lingxun Microelectronics Co., Ltd

Address: No.7,XingRong Road,ShiJie Town,Dongguan City,Guangdong Province,China

Low Voltage MOSFET Trench Process High Efficiency Motor Driver for 5G Base Station

China Low Voltage MOSFET Trench Process High Efficiency Motor Driver for 5G Base Station on sale
... utilizing a sophisticated Trench/SGT (Shielded Gate Trench) structure process, this MOSFET stands at the forefront of technology, delivering exceptional performance in a variety of demanding environments. The Trench Low Voltage MOSFET, in particular, is...
Reasunos Semiconductor Technology Co., Ltd.

Address: 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province

Low Voltage Mosfet Portable Devices Use SOT-23 P Channel BC2301

China Low Voltage Mosfet Portable Devices Use SOT-23 P Channel BC2301 on sale
... Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.3 A Pulsed Drain Current IDM -10 A Continuous Source-Drain Diode Current IS...
Guangdong Huixin Electronics Technology Co., Ltd.

Address: Tianan Cyber Park, No.1 Huangjin Road, Nancheng District, Dongguan City, Guangdong Province , China

Low Voltage Mosfet Power Module SMD Through Hole Versions PKF4510PI

China Low Voltage Mosfet Power Module SMD Through Hole Versions PKF4510PI on sale
... (typ at 5V) • 1,500 Vdc isolation voltage • MTBF > 4.9 million hours at +50°C pin temperature (+40°C ambient) • Low EMI in conformance with class A in CISPR 22 and FCC part 15J The MacroDens3–7W PKF 4000 I series true component level on...
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Mosfet Tube FDV301N High Performance Low Voltage MOSFET Transistor

China Mosfet Tube FDV301N High Performance Low Voltage MOSFET Transistor on sale
...MOSFET Power Electronics The FDV301N is an N-channel power MOSFET designed for high power switching applications. It is suitable for use in high-efficiency power conversion circuits, such as DC-DC converters, AC-DC converters, and motor control circuits. The device is rated at 60V and 18A, and features low on-resistance, low gate charge, and low capacitance for fast switching speeds. Features: • N-Channel MOSFET......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

270V 80A High Voltage Low Ripple DC Power Supply For Capacotor Testing

China 270V 80A High Voltage Low Ripple DC Power Supply For Capacotor Testing on sale
... voltage 0~270VDC Output current 0~8 0A Output Power 21.6KW Voltage Stabilization ≤0.3%+10mV Load Stabilization ≤0.5%+30mV Ripples and Noises ≤0.5%+10mVrms Voltage Display Accuracy 4-digit Accuracy: ±1%+1 word (10%-100% rating) Display Format 0...
Chengdu Xingtongli Power Supply Equipment Co., Ltd.

Address: No. 327, Xingye Road, Industry East Area, Xindu, Chengdu city, sichuan province, China

100V 80A, 9mз Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632

China 100V 80A, 9mз  Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632 on sale
FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

60A 80A Solid State Subminiature Relay , Low Voltage Relays G3NA-DA CE

China 60A 80A Solid State Subminiature Relay , Low Voltage Relays G3NA-DA CE on sale
...80A Solid State Subminiature Relay , Low Voltage Relays G3NA-DA CE Specification: 1. Bidirectional thyristor output, zero voltage, zero current turn off; 2.Optical isolation between the input circuit and output circuit; 3. Isolation between the input - output voltage 2500 v. 4. 100% load current aging test, through the European CE certification Main technical: Load voltage 240VAC/480VAC Load current 10A,20A,25A,30A,40A,50A,60A,80A......
YUEQING WINSTON ELECTRIC CO.,LTD.

Address: Floor 3rd,Liufeng Building,Liushi Town,Yueqing City,Zhejiang.325604.China

Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

China Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V on sale
...Mosfet Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

NPN Low Vcesat Mosfet Power Transistor PNP complement PBSS4160T

China NPN Low Vcesat Mosfet Power Transistor PNP complement PBSS4160T on sale
...LOW VCESAT MOSFET POWER TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage......
Shenzhen Huahao Gaosheng Technology Co., Ltd

Address: 2A2003, Building 2, Baohuju Garden, 200 Huaqing Avenue, Qinghu Community, Longhua Street, Longhua District, Shenzhen

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