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Double Sided Bordered Single Layer Capacitor 100pF 50V Low ESR Capacitor

    Buy cheap Double Sided Bordered Single Layer Capacitor 100pF 50V Low ESR Capacitor from wholesalers
     
    Buy cheap Double Sided Bordered Single Layer Capacitor 100pF 50V Low ESR Capacitor from wholesalers
    • Buy cheap Double Sided Bordered Single Layer Capacitor 100pF 50V Low ESR Capacitor from wholesalers
    • Buy cheap Double Sided Bordered Single Layer Capacitor 100pF 50V Low ESR Capacitor from wholesalers
    • Buy cheap Double Sided Bordered Single Layer Capacitor 100pF 50V Low ESR Capacitor from wholesalers

    Double Sided Bordered Single Layer Capacitor 100pF 50V Low ESR Capacitor

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    Model Number : HACC101S10V500
    Brand Name : Hoan
    Payment Terms : L/C,D/A,D/P,T/T,
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    Double Sided Bordered Single Layer Capacitor 100pF 50V Low ESR Capacitor

    HACC101S10V500 Double-Sided Bordered SLC (100pF,50V)


    What is a Double-Sided Bordered Single Layer Capacitor?
    For high-reliability microelectronic packaging, securing both the top and bottom of a chip capacitor is critical. The HACC101S10V500 is designed as a Double-Sided Bordered (Margin) Single Layer Capacitor.


    Unlike single-bordered variants, this chip features an un-metallized, exposed ceramic border (Margin) on both the top and bottom surfaces.

    •Top Margin: Prevents gold wire-bonding short circuits from accidental alignment drifts.
    •Bottom Margin: Prevents conductive silver epoxies (e.g., H20E) from migrating up the vertical sidewalls of the chip during bottom die attachment.


    This dual-barrier architecture guarantees that even under automated, high-volume production, the rate of epoxy-induced short-circuiting is reduced to absolute zero.


    The Science Behind TaN/TiW/Ni/Au Thin-Film Metallization

    The HACC101S10V500 stands out due to its multi-layer TaN/TiW/Ni/Au (Tantalum Nitride / Titanium-Tungsten / Nickel / Gold) metallization on both electrodes (thickness ≥ 2.5 µm Min). Here is why this complex film system is critical for microwave modules:

    1.TaN (Tantalum Nitride) Layer: Serves as an ultra-robust adhesion layer, locking the metallization to the ceramic dielectric body and preventing electrode peeling under high-temperature baking.
    2.TiW (Titanium-Tungsten) Barrier: Blocks the diffusion of copper or underlying substrate materials into the gold layer.
    3.Ni (Nickel) Barrier Layer: Acts as an industry-standard anti-leaching barrier. It prevents gold-leaching (dissolution of gold into solder or epoxies) during high-temperature reflow or silver-epoxy curing.
    4.Au (Gold) Top Coat: Offers a highly solderable, non-oxidizing surface optimized for thermosonic gold wire bonding (Au wire-bonding), ensuring outstanding pull-strength.


    Dimensions


    Technical Specifications (HACC101S10V500)

    Technical ParameterCertified Specification ValueTest /Environmental Conditions
    Model NumberHACC101S10V500
    Capacitor TypeSingle Layer Ceramic Chip (SLC)Double-sided bordered (Margin) type
    Capacitance Value100 pF ± 20%Measured @ 1kHz, 1Vrms, 25°C, No DCBias
    Rated Voltage50 V DCHighly stable voltage handling
    Operating Temp.Range-55°C to +125°CFully compliant with aerospace standards
    Top Film StructureTaN/TiW/Ni/Au (> 2.5 um Min)Excellent wire-bonding pull-strength
    Bottom Film StructureTaN/TiW/Ni/Au (> 2.5 um Min)Optimized for silver epoxy die-attach
    Compatible AssemblyConductive Epoxy (H20E) /SolderingSupports gold wire bonding

    Micro-Assembly & Wire Bonding Best Practices
    To ensure the mechanical longevity of the HACC101S10V500 in your hybrid microcircuits:

    1.Conductive Epoxy Mounting:
    •Highly optimized for conductive silver epoxy (e.g., H20E).
    •Recommended Baking Profile: Cure at 120℃ for 30 minutes for optimal shear strength and electrical conductivity.
    2.Wire Bonding Landing Area:
    •To prevent localized micro-fractures in the single-layer ceramic structure, the gold-wire bonding wedge/ball must land at least 25 µm away from the gold pad’s outer edge.
    3.Sidewall Inspection:
    •Thanks to the double-sided margin, the bottom epoxy fillet is safely contained. Visually inspect under a microscope to ensure no epoxy reaches the top gold pad.


    FAQ

    Q1: Why is HACC101S10V500 rated at 50V while some others are 100V?
    A: The 50V rating allows the use of an optimized dielectric thickness, enabling a higher capacitance value of 100pF in an extremely compact physical package. This is ideal for lower-voltage high-capacity decoupling paths in RF bias tees.

    Q2: Can I solder directly to the TaN/TiW/Ni/Au electrodes?
    A: Yes. The nickel (Ni) barrier layer prevents the gold from leaching into lead-free or leaded solders during high-temperature reflow, preserving the integrity of the solder joint.

    Q3: What are the storage requirements to prevent bonding failure?
    A: Store the capacitors in standard waffle packs or gel-paks inside a nitrogen cabinet or dry box at 20–25℃ and 40%–60% RH. Under these conditions, the shelf life is guaranteed for 1 year with pristine bondability.

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