FQPF9N25C 9N25C N-Channel MOSFET 250V 8.8A (Tc) 38W (Tc) Through Hole TO-220F

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FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25°C	8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	430mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	710pF @ 25V
FET Feature	-
Power Dissipation (Max)	38W (Tc)
Operating Temperature	-55°C ~ 150°C

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Product Tags:

integrated circuit chip

Company Info.

Shenzhen Koben Electronics Co., Ltd.

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