2V 350MA 0.67W CERAMIC3030 70-100LM 620-632NM SMD LED CHIP FOR
Architecture Garden Lighting (LED & Laser)
superior robustness, high reliability, long lifetime, low thermal
resistance. Perfectly addressing applications demanding for high
efficiency and long lifetime requirement SMT ceramic package with
silicone lens
Radiation: 80° ESD: 8 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class
3B) Luminous Flux: typ. 85 lm Luminous efficacy: typ. 115 lm/W
Maximum Ratings
Parameter Symbol Values
| Operating Temperature | Top | min. max. | -40 °C 125 °C |
| Storage Temperature | Tstg | min. max. | -40 °C 125 °C |
| Junction Temperature | T | max. | 135 °C |
| Forward current | I | min. max. | 100 mA 1000 mA |
Surge Current t ≤ 10 µs; D = 0.005 ; TJ = 25 °C | FS | max. | 1500 mA |
| Reverse voltage 2) | V | | Not designed for reverse operation |
ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B) | ESD | | 8 kV |
Characteristics
I = 700 mA; TJ = 25 °C
Parameter Symbol Values
| Peak Wavelength | λpeak typ. 6340 nm |
Centroid Wavelength 3) I = 350 mA | λdom min. 620 nm typ. 623 nm max. 632 nm |
| |
| Spectral Bandwidth at rel,max | ∆λ typ. 16 nm |
| Viewing angle at 50% IV | 2φ typ. 80 ° |
Forward Voltage 4) I = 350 mA | 1.8V 2.00V 2.30V |
| Reverse current 2) | Not designed for reverse operation |
| Electrical thermal resistance junction/solderpoint with efficiency
ηe = 74 % | RthJS elec. typ. 2.5 K / W |
Forward Voltage Groups
Group Forward Voltage 4)
I = 350 mA
| 70 lm | 75 lm |
75 lm | 82 lm |
| 82 lm | 90 lm |
| 90 lm | 100 lm |
Centroid
Group
Centroid Wavelength 3)
I = 350 mA
λcentroid
Relative Spectral Emission
Irel = f (λ); IF = 350 mA; TJ = 25 °C
Radiation Characteristics
Irel = f (ϕ); TJ = 25 °C
Dimensional Drawing
Further Information:
Approximate Weight: 28.0 mg
Package marking: Anode
Corrosion test:Class: 3BTest condition: 40°C / 90 % RH / 15 ppm H2S
/ 14 days (stricter than IEC 60068-2-43)
ESD advice: The device is protected by ESD device which is
connected in parallel to the Chip.
Reflow Soldering Profile
Product complies to MSL Level 2 acc. to JEDEC J-STD-020E
Profile Feature Symbol Pb-Free (SnAgCu) Assembly Unit
Minimum Recommendation Maximum
Ramp-up rate to preheat*) 2 25 °C to 150 °C | 3 | K/s |
tS 60 100 T to T | 120 | s |
Ramp-up rate to peak*) T to T 2 | 3 | K/s |
| Liquidus temperature TL 217 | | °C |
| Time above liquidus temperature tL 80 | 100 | s |
| Peak temperature T 245 | 260 | °C |
Time within 5 °C of the specified peak 10 20 temperature TP - 5 K | 30 | s |
Ramp-down rate* 3 T to 100 °C | 6 | K/s |
Time 25 °C to TP | 480 | s |
All temperatures refer to the center of the package, measured on
the top of the component * slope calculation DT/Dt: Dt max. 5 s;
fulfillment for the whole T-range
