MOSFET Power Electronics
SI2347DS-T1-BE3 High Performance Power Switching
Product Listing:
SI2347DS-T1-BE3 - N-Channel Power MOSFET
Features:
- Low On-Resistance
- Low Input Capacitance
- Low Gate Charge
- High-Speed Switching
Specifications:
- Drain-Source Voltage (Vdss): 30V
- Gate-Source Voltage (Vgss): +/-20V
- Drain Current (Id): 11A
- Power Dissipation: 15W
- On-Resistance (Rds): 0.0046 Ohm
- Input Capacitance (Ciss): 590pF
- Gate Charge (Qg): 11.4nC
- Operating Temperature: -55°C to 150°C
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