Switch Mode Power Supplies SMPS Mosfet Power Transistor 50A 100V
Mosfet Power Transistor Description:
The AP50N10P uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
Mosfet Power Transistor Features
VDS = 100V ID =50 A
RDS(ON) < 22mΩ @ VGS=10V
Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) |
| AP50P10P | TO-220-3L | AP50P10P XXX YYYY | 1000 |
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 100 | V |
| VGS | Gate-Sou rce Voltage | ±20 | V |
| ID@TC=25℃ | Continuous Drain Current, V GS @ 10V 1 | 50 | A |
| ID@TC=100 ℃ | Continuous Drain Current, V GS @ 10V 1 | 37 | A |
| IDM | Pulsed Drain Current2 | 130 | A |
| EAS | Single Pulse Avalanche Energy 3 | 84 | mJ |
| IAS | Avalanche Current | 41 | A |
| PD@TC=25 ℃ | Total Power Dissipation4 | 149 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
| RθJA | Thermal Resistance Junction-Ambient 1 | 62 | ℃/W |
| RθJC | Thermal Resistance Junction-Case 1 | 0.84 | ℃/W |
Electrical Characteristics (T J=25℃, unless otherwise noted)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , I D=30A | --- | --- | 22 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , I =250uA | 2.5 | --- | 4.5 | V |
IDSS |
Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25℃ | --- | --- | 1 |
uA |
| VDS=80V , VGS=0V , TJ=55℃ | --- | --- | 5 |
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=30A | --- | 31 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.9 | 3.8 | Ω |
| Qg | Total Gate Charge (10V) | | --- | 27.6 | --- | |
| Qgs | Gate-Source Charge | --- | 11.4 | --- |
| Qgd | Gate-Drain Charge | --- | 7.9 | --- |
| Td(on) | Turn-On Delay Time |
VDD=50V , VGS=10V , | --- | 16.5 | --- | |
| Tr | Rise Time | --- | 35 | --- |
| Td(off) | Turn-Off Delay Time | --- | 17.5 | --- |
| Tf | Fall Time | --- | 12 | --- |
| Ciss | Input Capacitance | | --- | 1890 | --- | |
| Coss | Output Capacitance | --- | 268 | --- |
| Crss | Reverse Transfer Capacitance | --- | 67 | --- |
| IS | Continuous Source Current 1,5 |
VG=VD=0V , Force Current | --- | --- | 58 | A |
| ISM | Pulsed Source Current 2,5 | --- | --- | 130 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time |
IF=30A , dI/dt=100A/µs , | --- | 22 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 20 | --- | nC |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , I D=30A | --- | --- | 22 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , I =250uA | 2.5 | --- | 4.5 | V |
IDSS |
Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25℃ | --- | --- | 1 |
uA |
| VDS=80V , VGS=0V , TJ=55℃ | --- | --- | 5 |
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=30A | --- | 31 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.9 | 3.8 | Ω |
| Qg | Total Gate Charge (10V) | | --- | 27.6 | --- | |
| Qgs | Gate-Source Charge | --- | 11.4 | --- |
| Qgd | Gate-Drain Charge | --- | 7.9 | --- |
| Td(on) | Turn-On Delay Time |
VDD=50V , VGS=10V , | --- | 16.5 | --- | |
| Tr | Rise Time | --- | 35 | --- |
| Td(off) | Turn-Off Delay Time | --- | 17.5 | --- |
| Tf | Fall Time | --- | 12 | --- |
| Ciss | Input Capacitance | | --- | 1890 | --- | |
| Coss | Output Capacitance | --- | 268 | --- |
| Crss | Reverse Transfer Capacitance | --- | 67 | --- |
| IS | Continuous Source Current 1,5 |
VG=VD=0V , Force Current | --- | --- | 58 | A |
| ISM | Pulsed Source Current 2,5 | --- | --- | 130 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time |
IF=30A , dI/dt=100A/µs , | --- | 22 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 20 | --- | nC |
Note :
1.The data tested by surface mounted on a 1 inch FR-4 board with
2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is
VDS=25V,VGS=10V,L=0.1mH,IAS =41A
4.The power dissipation is limited by 150℃ junction temperature
5.The data is theoretically the same as IDand IDM, in real
applications , should be limited by total power dissipation.
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