Others Material
Copper Foam
Specifications: Thickness range: 0.8-10MM PPI range: 30-140 Porosity: 95-98% Hole rate:≥98% Aperture: 0.3mm-7mm (10-140ppi) Surface density: 100-2000 g/m2 Bulk density: 0.1-2.0g/cm3 Size: coil or sheet, maximum width 450mm Main features: Sound: the porous structure can produce diffuse reflection, so as to achieve the silencing effect of microporous silencing on acoustic wave Specific surface area: under the same rate of pass through, compared to other porous materials have
Free-Standing GaN Substrates
2 inch Free-Standing GaN Substrates Dimensions:Ф 50.8 mm ± 1 mm Thickness:350 ± 25 µm Useable Surface Area:> 90% Orientation:C-plane (0001) off angle toward M-Axis 0.35°± 0.15° Orientation Flat:(1-100) ± 0.5°, 16.0 ± 1.0 mm Secondary Orientation Flat:(11-20) ± 3°, 8.0 ± 1.0 mm Total Thickness Variation:≤ 15 µm BOW:≤ 20 µm Conduction Type:N-type(Undoped); N-type(Ge-doped); Semi-Insulating(Fe-doped) Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm; >106 Ω·cm Dislocation Density: 1
AlN Templates
2 inch AlN Templates: Dimensions:Ф 50.8 mm ± 0.1 mm Substrate:Sapphire (Single Side Polished) Thickness:4 ~ 5 µm Orientation:C-plane (0001) ± 1° Conduction Type:Semi-Insulating Crystalline quality: XRD FWHM of (0002) < 350 arcsec. XRD FWHM of (10-12) < 450 arcsec Edge Exclusion zone:< 2 mm Surface Roughness:Ra < 5 nm (10 µm x 10 µm)
GaN Templates 2 & 4 inch
2 inch GaN Templates: Dimensions:Ф 50.8mm ± 0.1mm Thickness:4 µm, 20 µm; 4 µm Orientation:C-plane(0001) ± 0.5° Conduction Type:N-type(Undoped); N-type(Si-doped); P-type(Mg-doped) Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm; ~ 10 Ω·cm Carrier Concentration: < 5x1017 cm-3; > 1x1018 cm-3; > 6x1016 cm-3 Mobility: ~ 300cm2/V·s; ~ 200 cm2/V·s; ~ 10 cm2/V·s Dislocation Density: Less than 5x108 cm-2 Substrate structure: GaN on Sapphire (Standard: SSP Option: DSP) Useable Surface Area:
Tungsten Crucibles
The tungsten crucible is used in the growth of sapphire single crystal, the melting of quartz glass, the vacuum coating and the rare earth smelting. Purity: W≥99.95%; O < 0.1% Density: ≥18.2g/cm3 Surface roughness: Ra≤3.2 State: sintered state Maximum use temperature: ≤ 2400℃
Vacuum Arc Furnace
Main parameter index: 1. arc smelting chamber: vertical cylindrical vacuum chamber, double layer water-cooling, size Φ300X350mm; 2. vacuum system: mechanical pump + molecular pump; mechanical pump + diffusion pump 3.: the ultimate pressure≤6.67X10-5Pa (molecular pump) or ≤6.67X10-4Pa(diffusion pump) 4. smelting current: long working current 400A 5. smelting crucible: 5 working stations; three smelting alloy working stations; one suction casting station; one smelting degassing
Pulsed Laser Deposition System
Main parameter index: 1.: the ultimate vacuum coating chamber is ≤6.6X10-5Pa; the pumping time: 30 minutes is better than 8X10-4Pa 2. target: 4 feet rotation target (with shield), revolution, rotation and scanning, target substrate distance adjustable (30-90mm) 3. substrate rotation: revolution, rotation of two samples of toga shield 4. substrate heating temperature: the use of armored heating plate,0-800℃ continuous adjustable; using temperature control instrument for
Plasma Enhanced Chemical Vapor Deposition System
Main parameter index: 1. equipment: deposition chamber, molecular pumping system, upper and lower electrodes, gas path system, power supply and temperature control and equipment control system 2. deposition chamber: Φ350XH350mm 3. upper electrode: multi layer uniform intake, size is Φ150mm 4. electrode: rotary heating, room temperature -600℃ adjustable, temperature ≤±3℃, the sizeΦ 100mm 5.RF power 500W, equipped with automatic matching device 6. mass flow meter control work
Resistance type Evaporator
Main parameter index: 1. ultimate vacuum:≤6.6X10³Pa 2. vacuum acquisition system adopts molecular pump + mechanical pump unit 3. continuous pumping for 30 minutes, the vacuum degree≤86X10³Pa 4. evaporation: resistance type evaporation electrode 2 groups, evaporation power supply: 2 sets, power 2KW The 5. substrate support: rotation, heating, water base plate 6. film thickness measurement, equipped with quartz crystal film thickness instrument, a water cooled probe
Electron Beam Evaporator
Main parameter index: 1. ultimate vacuum: ≤6.6X10³Pa 2. vacuum acquisition system adopts molecular pump + mechanical pump unit 3. continuous pumping for 30 minutes, the vacuum degree ≤86X10³Pa 4.E type electronic gun, maximum voltage 8-10KV, power 8KW 5. pieces of base diameter of 400mm, can be heated to below 300℃, with water cooling, substrate speed adjustable, adjustable target substrate distance 6. film thickness measurement, equipped with quartz crystal film thickness
Magnetron Sputtering Machine
Main technical indexes: 1. ultimate vacuum: ≤6.6X10³Pa 2. vacuum acquisition system adopts molecular pump + mechanical pump unit 3. continuous pumping for 30 minutes, the vacuum degree is less than or equal to 8x10³Pa 4. cylindrical sputtering targets can work independently or at the same time The 5. substrate ≤60mm in diameter, can be heated to ≤700℃, with water cooling, substrate speed adjustable, adjustable target base moment Component Composition and specifications Vacuum
Metal Aerator
Filtering precision: 0.5um-50um Porosity: 20-50% Compressive strength: 2-3Mpa Temperature resistance: 250℃ Maximum working pressure difference: 0.6Mpa
High temperature Metal Alloys Filter Plate
Diameter: 5mm - 300mm Thickness: 0.5mm - 10mm
Porous Titanium Plate
Material: titanium Shape: round, square Filtering precision: 0.22-100 micron (UM) Diameter: less than 400 mm (overall, no stitching, no weld) Diameter: > 400 mm (multiple splicing, with weld) Thickness: 1 mm, 1.5 mm, 2 mm, 3 mm, 5 mm; 0.6~30 (mm) or according to customer requirements Application scope Key components such as sensor parts, inductor parts, detector components, pressure relief devices, polypropylene, polyethylene and other high viscosity polymer extrusion
Metal Sintering
Diameter: Φ5mm - Φ300mm Thickness: 0.5mm - 10mm
Stainless Steel Filter
Diameter: Φ20mm - Φ200mm Length: L100mm - L1200mm Thickness: more than 1mm
Metal Sintering filter
Metal Sintering filter Diameter: Φ20mm - Φ200mm Length: L100mm - L1200mm Thickness: more than 1mm can be
Graphite bearing
One of the main uses of graphite is the production of refractory materials, including refractory bricks, crucibles, continuous casting powder, mold core, mold, detergent and high temperature resistant material. In recent years, two important changes in the refractory industry is MgO-C brick is widely used in steelmaking furnace lining, and the application of aluminum carbon brick in continuous casting process. The graphite refractories and steelmaking refractories are closely
Graphite special-shaped parts
Graphite special-shaped parts Customizing according to customer requirements
Graphitized electrode
The graphite electrode is used for petroleum coke (carbon) pitch coke (carbon) for granular materials, coal tar as the binder, a high-temperature graphite conductive material after calcining, crushing, mixing, kneading, shaping, baking and graphitization and machining processes made, called graphite electrode. Graphite chemical order is an important process in the production of graphite electrode, and the serial graphitization process is the most advanced technology in the