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Magnachip Semiconductor

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MDP1933TH Magnachip Semiconductor 157W 20V 4V 59.4nC@ 10V 80V

MDP1933TH Magnachip Semiconductor 157W 20V 4V 59.4nC@ 10V 80V

Price: 0.28u MOQ: Negotiable Delivery Time: Negotiable

MDP1932 BVDSS Gate Threshold Voltage MagnaChip Gate Leakage Current

Drain-Source Breakdown Voltage BVDSS ID = 250μA, V GS = 0V ID = 250μA, V GS = 0V Gate Threshold Voltage VGS(th) VDS = V GS , I D = 250μA Drain Cut-Off Current VGS(th) VDS = 72V, V GS = 0V Gate Leakage Current IGSS VGS = ±20V, V DS = 0V Drain-Source ON Resistance RDS(ON) VGS = 10V, I D = 50A Forward Transconductance gfs DS = 10V, I D = 50A

Price: 0.69u MOQ: Negotiable Delivery Time: Negotiable