SiC Substrate
high thermal conductivity resistivity Sic Optical Block Lens for quantum optics
High purity un-doped 4inch 4H-Semi silicon carbide sic wafers for optical lens or device Silicon Carbide SiC crystal substrate wafer carborundum SILICON CARBIDE MATERIAL PROPERTIES Product Name: Silicon carbide (SiC) crystal substrate Product Description: 2-6inch Technical parameters: Cell structure Hexagonal Lattice constant a = 3.08 Å c = 15.08 Å Priorities ABCACB (6H) Growth method MOCVD Direction Growth axis or Partial (0001) 3.5 ° Polishing Si surface polishing Bandgap 2
SiC crystal 4H-SEMI 4" Optical Silicon Carbide Wafer
High purity un-doped 4inch 4H-Semi silicon carbide sic wafers for optical lens or device Silicon Carbide SiC crystal substrate wafer carborundum SILICON CARBIDE MATERIAL PROPERTIES Product Name: Silicon carbide (SiC) crystal substrate Product Description: 2-6inch Technical parameters: Cell structure Hexagonal Lattice constant a = 3.08 Å c = 15.08 Å Priorities ABCACB (6H) Growth method MOCVD Direction Growth axis or Partial (0001) 3.5 ° Polishing Si surface polishing Bandgap 2
3inch 4inch 2inch 0.35mm DSP surface 4h-N Silicon Carbide Sic Wafers
4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device, customized thickness 4inch 4H-N silicon carbide crystal sic wafers for 4inch seed crystal grade; 3inch 4inch 4h-n 4h-semi dummy test grade silicon carbide sic wafers Silicon Carbide SiC crystal substrate wafer carborundum SILICON CARBIDE MATERIAL PROPERTIES Product Name: Silicon carbide (SiC) crystal substrate Product Description: 2-6inch Technical
customized Thickness 1.5mm 4" 4H-N sic Crystal as-cut blank Wafers
4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device, customized thickness 4inch 4H-N silicon carbide crystal sic wafers for 4inch seed crystal grade; Silicon Carbide SiC crystal substrate wafer carborundum SILICON CARBIDE MATERIAL PROPERTIES Product Name: Silicon carbide (SiC) crystal substrate Product Description: 2-6inch Technical parameters: Cell structure Hexagonal Lattice constant a = 3.08 Å c = 15.08 Å
4inch Sic Ingot Silicon Carbide 5 - 15mm Thickness for semiconductors
silicon carbide sic broken block,Gem grade sic ingot , 5-15mm thickness sic scrap SiC Wafer Feature Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å Stacking Sequence ABCB ABCACB Mohs Hardness ≈9.2 ≈9.2 Density 3.21 g/cm3 3.21 g/cm3 Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K Refraction Index @750nm no = 2.61 ne = 2.66 no = 2.60 ne = 2.65 Dielectric Constant c~9.66 c~9.66 Thermal Conductivity (N-type, 0
3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics
3inch sic wafer,4H High Purity Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED
Semi - Insulating Silicon Carbide Substrate , Sic Wafer 4H High Purity
4H High Purity Semi-Insulating Silicon Carbide Substrateshigh purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem Applications of SiC Crystal Substrates and Wafers Silicon carbide (SiC) crytsals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength optoelectronic, high
dummy production Research Grade Silicon Carbide high purity 4h-semi un-doped transparent sic Wafer
4H High Purity Semi-Insulating Silicon Carbide Substrateshigh purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem About SiC Crystal Silicon carbide (SiC), also known as carborundum /kɑːrbəˈrʌndəm/, is a semiconductor containing silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite.
4H-SEMI Polished Sic Wafer lens 2INCH 3INCH 4INCH 9.0 Hardness For Device Material
6inch sic substrates, sic ingot ,sic crystal ingots ,sic crystal block, sic semiconductor substrates,6inch Silicon Carbide Wafer,4H-semi SiC wafer,6inch 4H-N type dummy grade sic wafer for test, 1. Description Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å Stacking Sequence ABCB ABCACB Mohs Hardness ≈9.2 ≈9.2 Density 3.21 g/cm3 3.21 g/cm3 Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K Refraction Index
Dummy Grade 6Inch Sic Substrate Wafer Dia150mm 4H-N 500mm Thickness
6inch sic substrates ,6inch sic wafers, sic crystal ingots , sic crystal block ,sic semiconductor substrates,Silicon Carbide Wafer 6 inch diameter, Silicon Carbide (SiC) Substrate Specification Grade Zero MPD Grade Production Grade Research Grade Dummy Grade Diameter 150.0 mm±0.2mm ThicknessΔ 350 μm±25μm or 500±25un Wafer Orientation Off axis : 4.0° toward< 1120> ±0.5° for 4H-N On axis : ±0.5° for 6H-SI/4H-SI Primary Flat {10-10}±5.0° Primary Flat Length 47.5 mm±2.5 mm Edge
10 Mm X 10 Mm 6H Semi-Insulating Type SiC Substrate Research Grade SiC Crystal Substrate
10 Mm X 10 Mm 6H Semi-Insulating Type SiC Substrate Research Grade SiC Crystal Substrate 4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates, Silicon Carbide substrates for a semiconductor device, 4h-semi 4h-N customized square shape sic wafers, 10 mm x 10 mm 6H Semi-Insulating Type SiC, Research Grade, SiC Crystal Substrate Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2 optoelectron
customized 4H-N Type Semi-Insulating SiC Substrates 4inch 6inch Silicon Carbide Wafers
2inch Silicon Carbide Wafers 6H or 4H-N type or Semi-Insulating SiC Substrates 4H-N Type / Semi Insulating SiC Substrates 2inch 3inch 6inch Silicon Carbide Wafers What is a sic wafer A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance semiconductor that is ideal for a wide variety of applications. In addition to its high thermal resistance, it also features a very high level of hardness. Classification Silicon
Sic Wafer HPSI：High-purity semi-insulating High thermal conductivity MPD controllable
Information of HPSI SiC Wafers HPSI (High Purity Semi-Insulating) silicon carbide wafers are critical foundational substrates for high-frequency GaN RF devices and advanced third-generation semiconductors. With the rapid expansion of 5G communication, millimeter-wave radar and aerospace electronics markets, the global SiC substrate market is projected to exceed USD 2 billion by 2030, playing an irreplaceable strategic role in next-generation wireless communication and high
4H-N SiC：Custom thickness SSP/DSP polishing available PV&energy storage inverters
Information of 4H-N SiC This high-purity 4H-N type silicon carbide (4H-N SiC) wafer is a single-crystal substrate manufactured for power semiconductor device fabrication that requires high breakdown voltage, high thermal conductivity, wide bandgap performance, chemical inertness, and low defect density. The product is characterized by a circular single-crystal body, precise thickness control, an epi-ready polished surface, a controlled crystallographic off-axis orientation,
High-Purity Semi-Insulating SiC Wafer HPSI Silicon Carbide Substrate for Power & RF Devices
Product Description High-Purity Semi-Insulating (HPSI) SiC wafers are advanced single-crystal silicon carbide substrates designed for power electronics, RF, and high-frequency devices. They offer excellent thermal conductivity, high resistivity, strong chemical stability, and superior mechanical hardness. Ideal as a substrate for GaN HEMTs, SiC MOSFETs, and other high-power, high-frequency applications, HPSI wafers ensure minimal leakage, efficient heat dissipation, and
2inch N-type 6H polytype Silicon Carbide substrate optoelectronics Gallium nitride growth
Product Description 2inch Silicon carbide wafer's Product description: This 2-inch (50.8 mm) 6H-polytype, N-type Silicon Carbide wafer is a high-performance semiconductor substrate engineered for advanced research and specialized electronic applications. Leveraging a wide bandgap of approximately 3.02 eV, this wafer provides superior thermal conductivity and high-breakdown field strength compared to traditional silicon. Doped with Nitrogen to achieve consistent N-type
Precision Silicon Ring (Si Ring) for Semiconductor Plasma Etching Systems in Single Crystal and Polycrystalline Silicon
The Precision Silicon Ring (Si Ring) is a semiconductor-grade consumable component used in plasma etching, deposition, and wafer processing equipment. It functions as a focus ring, edge ring, or chamber liner ring, helping to control plasma distribution, improve etching uniformity, and protect chamber hardware from direct ion bombardment. Manufactured from high-purity single crystal silicon or polycrystalline silicon, the ring offers excellent compatibility with silicon wafer
High Purity (5N) Single Crystal Silicon Electrode with Customizable Gas Hole Diameter and Multiple Resistivity Options for Semiconductor Plasma Systems
The High-Purity Single Crystal Silicon Electrode is a semiconductor-grade plasma chamber component designed for use in advanced etching, deposition, and surface modification equipment. Manufactured from ultra-clean single crystal silicon (5N purity), it provides stable electrical performance, excellent plasma compatibility, and precise gas/electric field control in critical semiconductor processes. As a core consumable inside plasma reactors, silicon electrodes directly
CVD SiC Electrode for Plasma Etching & Semiconductor Process Chambers
The CVD Silicon Carbide (SiC) Electrode is a high-performance semiconductor chamber component engineered for plasma etching, PECVD, ICP, and advanced wafer processing systems. Manufactured from high-purity Chemical Vapor Deposition (CVD) Silicon Carbide, the electrode delivers exceptional plasma erosion resistance, thermal stability, and long-term electrical consistency in aggressive semiconductor environments. Compared with conventional silicon electrodes, CVD SiC electrodes
SiC Dummy Wafer for Semiconductor Process Stabilization & Equipment Conditioning
The SiC Dummy Wafer (Silicon Carbide Carrier Wafer / Process Monitor Wafer) is a high-durability process wafer engineered for semiconductor equipment qualification, chamber seasoning, thermal stabilization, process verification, and production wafer protection. Unlike device-grade wafers used for chip fabrication, SiC dummy wafers function as auxiliary wafers within semiconductor process tools to maintain chamber equilibrium, optimize thermal distribution, and improve process