GaN Epitaxial Wafer (68)
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Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
625um To 675um 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
SiC Epitaxial Wafer (42)
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4 Inch 4H-SiC Substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm For Power Microwave
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
4 Inch 4H-SiC Substrate P-Level SI 500.0±25.0μM MPD≤0.3/Cm2 Resistivity≥1E9Ω·Cm For Power Microwave
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
4inch 4H-SiC Substrate P-Level N-Type 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•Cm
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
4inch uGaN on silicon undoped gallium nitride on Silicon Epitaxial Wafer
Price: 1000
MOQ: 5
Delivery Time: Negotiable
GaAs Epi Wafer (15)
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2inch GaAs Epi Wafer GaAs Undoped Substrates VGF
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
JDCD10-001-005 2 Inch GaAs(111) Zn Doped Substrates
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
JDCD10-001-004 2 Inch GaAs (111) Si Doped Substrates
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
JDCD10-001-003 2 inch GaAs(100) Zn Doped Substrates
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
CVD Diamond Substrates (15)
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JDCD05-001-003 10*10mm2*0.3mm Electronic Grade Single Crystal Diamond,N Content<100ppb, XRD<0.015º Thermal Conductivity
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
JDCD05-001-006 10*10mm2*0.5mm Electronic Grade Single Crystal Diamond,N Content<100ppb, XRD<0.015º Thermal Conductivity
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
JDCD05-001-005 5*5mm2*0.5mm Electronic Grade Single Crystal Diamond,N Content<100ppb, XRD<0.015º Thermal Conductivity
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
JDCD05-001-007 CVD Diamond Substrates
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Rapid Thermal Annealing System (2)
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Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3 month
150mm Rapid Thermal Annealing System With Three Sets Process Gases
Price: Negotiable
MOQ: 1
Delivery Time: 8-10week days
Hall Effect Sensor Tester (3)
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Semiconductor Materials Hall Effect Sensor Tester Carrier Concentration Measurement
Price: Negotiable
MOQ: 1
Delivery Time: 8-10week days
Hall Coefficient Hall Effect Sensor Tester Mobility Resistivity Measurement
Price: Negotiable
MOQ: 1
Delivery Time: 8-10week days
Carrier Concentration Hall Effect Sensor Tester Semiconductor Industry
Price: Negotiable
MOQ: 1
Delivery Time: 8-10week days
Aluminum Nitride Wafer (21)
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JDWY01-001-002 2 Inch Thick Film (1,2)Um AIN On Sapphire Wafer DSP XRD FWHM Of(002)≤80arcsec(102) ≤650arcsec
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
JDCD02-001-004 10*10mm2 AlN Single Crystal 400±50μM S/P/R Grade
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
JDWY01-001-007 2 Inch Thick Film (4,5)Um AIN On Sapphire Wafer,SSP,XRD FWHM Of(002)≤160arcsec\(102) ≤400arcsec
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
JDWY01-001-006 2 Inch Thick Film (3,4)Um AIN On Sapphire Wafer,DSP,XRD FWHM Of(002)≤120arcsec(102) ≤450arcsec
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Laser Diode Chip (10)
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94um Laser Diode Chip Slope Efficiency 1.0W/A Wavelength 915nm
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Emitter Size 94um Diode Laser Chip On Submount Design Threshold Current 0.5A
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Threshold Current 0.5A Laser Diode Chip Laser Printing Slope Efficiency 1.0W/A
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
915nm Laser Diode Chip Printing Surface Mount Standard Package
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Silicon Carbide Crystal (12)
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100.0mm Silicon Carbide Crystal 4" P Grade 18.0mm
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
JDZJ01-001-006 SiC Seed Crystal S Grade 6" Φ153±0.5mm
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
JDZJ01-001-002 SiC Ingot Crystal 4" D Grade
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
JDZJ01-001-008 4&6inch SiC Seed Crystal
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Ga2O3 Wafer (13)
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JDCD04-001-007 10x10mm2(010)Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
JDCD04-001-003 10x10mm2 100(Off 6°) Fe Doped Free Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
JDCD04-001-002 10x10mm2 (-201) Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Single Side Polished Ga2O3 Wafer Single Crystal Substrate
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days