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GaN Single Crystal Substrate

Name: GaN Single Crystal Substrate
Brand: Shanghai GaNova Electronic Information Co., Ltd.

2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview One of the key methods used to fabricate these devices is a light n-type doping of GaN with a low residual impurity concentration of the order of 1015 cm−3 or less. Despite intensive research efforts, the performance of GaN-based power devices has remained insufficient because of an immature epitaxial growth process. 2-inch Free-standing N-GaN

Place of Origin Suzhou China

Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.

Product Name 2-inch Free-standing N-GaN Substrates

Dimensions 50.0 ±0.3mm

BoW ≤ 20μm

Model Number JDCD01-001-020

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Product Description

2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer

Overview
One of the key methods used to fabricate these devices is a light n-type doping of GaN with a low residual impurity concentration of the order of 1015 cm−3 or less. Despite intensive research efforts, the performance of GaN-based power devices has remained insufficient because of an immature epitaxial growth process.

2-inch Free-standing N-GaN Substrates
	Production level(P)			Research(R)	Dummy(D)	Note: (1) 5 points: the miscut angles of 5 positions are 0.55 ±0.15^o (2) 3 points: the miscut angles of positions (2, 4, 5) are 0.55 ±0.15^o (3) Useable area: exclusion of periphery and macro defects (holes)
	P+	P	P-
Item	GaN-FS-C-N-C50-SSP
Dimensions	50.0 ±0.3 mm
Thickness	400 ± 30 μm
Orientation flat	(1- 100) ±0.1^o_, 12.5 ± 1 mm
TTV	≤ 15 μm
BOW	≤ 20 μm
Resistivity (300K)	≤ 0.02 Ω·cm for N-type (Si-doped)
Ga face surface roughness	≤ 0.3 nm (polished and surface treatment for epitaxy)
N face surface roughness	0.5 ~1.5 μm (single side polished)
C plane (0001) off angle toward M-axis(miscut angles)	0.55 ± 0.1^o (5 points)	0.55± 0.15^o (5 points)		0.55 ± 0.15^o (3 points)
Threading dislocation density	≤ 7.5 x 10⁵ cm^-2	≤ 3 x 10⁶ cm^-2
Number and max size of holes in Ф47 mm in the center	0		≤ 3@1000 μm	≤ 12@1500 μm	≤ 20@3000 μm
Useable area	> 90%			>80%	>70%
Package	Packaged in a cleanroom in single wafer container

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.