Slkor BTA26-800B
Product OverviewFunction: TRIAC for 3 Quadrants / 4 Quadrants switching applications.Advantages: Low gate trigger voltage (VGT: 1.5V), high repetitive peak off-state voltage (VDRM VRRM: 800V and 1000V), and high RMS on-state current (IT(RMS): 25A).Applications: Washing machines, vacuum cleaners, massagers, solid-state relays, AC motor speed regulation, and similar applications.BrandSLKORMICROPackage TypeTO-3PTechnical SpecificationsSymbolParameterConditionsBTA26-800
Product Overview
Function: TRIAC for 3 Quadrants / 4 Quadrants switching applications.
Advantages: Low gate trigger voltage (VGT: 1.5V), high repetitive peak off-state voltage (VDRM VRRM: 800V and 1000V), and high RMS on-state current (IT(RMS): 25A).
Applications: Washing machines, vacuum cleaners, massagers, solid-state relays, AC motor speed regulation, and similar applications.
Brand
SLKORMICRO
Package Type
TO-3P
Technical Specifications
| Symbol | Parameter | Conditions | BTA26-800 Value | BTA26-1000 Value | Unit |
|---|---|---|---|---|---|
| VDRM VRRM | Repetitive Peak Off-State Voltage | 800 | 1000 | V | |
| IT(RMS) | R.M.S On-State Current | Tc=110C | 25 | A | |
| ITSM | Surge On-State Current | f=50/60Hz, tp=16.7ms/20ms | 250/260 | A | |
| It | It for fusing | Tp=10ms | 340 | As | |
| PG(AV) | Average Gate Power Dissipation | Tj=125C | 1 | W | |
| IGM | Peak Gate Current | Tj=125C | 6 | A | |
| Tj | Operating Junction Temperature | 40~125 | C | ||
| TSTG | Storage Temperature | 40~150 | C | ||
| Symbol | Parameter | Test Conditions | Value | Unit |
|---|---|---|---|---|
| IDRM | Repetitive Peak Off-State Current | Tc=25C | 5 | uA |
| IDRM | Repetitive Peak Off-State Current | Tc=125C | 3 | mA |
| IRRM | Repetitive Peak Reverse Current | Tc=25C | 5 | uA |
| IRRM | Repetitive Peak Reverse Current | Tc=125C | 3 | mA |
| VTM | Forward "on" voltage | IT=35A, tp=380us | 1.55 | V |
| VGT | Gate trigger voltage | VD=12V ,RL=30 | 1.5 | V |
| di/dt | Critical rate of rise of on-state current | I,II,III F=120Hz,Tj=125C, IG=2xIGT,tr100ns | 50 | A/us |
| di/dt | Critical rate of rise of on-state current | IV | 10 | A/us |
| IGT | Gate trigger current | I,II,III VD=12V, RL=30 | 35 | mA |
| IGT | Gate trigger current | IV | 100 | mA |
| IH | Holding current | IT=0.2A | 60 | mA |
| VDG | Gate non-trigger voltage | ALL VD=VDRM, TJ=125C | 0.2 | V |
| dv/dt | Critical-rate of rise of commutation voltage | TJ=125C , VD=2/3VDRM , Gate open circuit | 400 | V/us |
| Rth(j-c) | Thermal resistance Junction to case | 1.1 | C/W | |
| Rth(j-a) | Thermal resistance Junction to ambient | 50 | C/W |
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