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...circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat)...
... & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat)= 3.5 V ...
... circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat...
... circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat...
... circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) = 3.5 V (Max.) to...
...Power Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z Integrates inverter, brake power circuits & control circuits (IGBT drive units, p...
...control circuits (IGBT drive units, protection units for over current, under voltage & over temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) = 3.5V (Ma...
... & control circuits (IGBT drive units, protection units for over-current, under-voltage & over temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) = 2.5V ...
... & control circuits (IGBT drive units, protection units for over-current, under-voltage & over temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) = 2.5V ...
... & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) = 2.5 V...
...IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault vol...
...IGBT Modules FF450R08A03P2 Power Driver Module IGBT Half Bridge 750V 450A Module Description of FF450R08A03P2 The FF450R08A03P2 is a very compact half-bridge module targeting Hybrid- and Electric Vehicle app...
...Power Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z Integrates inverter & control circuits (IGBT drive units, protection units for ov...
...Power Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z Integrates inverter & control circuits (IGBT drive units, protection units for ov...
...Power Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z Integrates inverter & control circuits (IGBT drive units, protection units for ov...
... (igbt drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) = 2.5 V (Max.) toff = 3.0 ...
... (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) = 2.5 V (Max.) toff = 3.0 ...
... (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z High speed type IGBT : VCE (sat) = 2.5 V (Max.) toff = 3.0 ...
...IGBT Power Module Transistors IGBTs Single IRG4PC30KDPBF Specifications Part Status Active IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 28A Current - Collector ...