Single Bipolar Transistors
High Voltage NPN Transistor JSMSEMI MMBTA42 Featuring SOT23 Package and Complementary MMBTA92
Product OverviewThe MMBTA42 is an NPN Silicon High Voltage Transistor designed for high voltage switching and amplifier applications. It offers complementary PNP types with the MMBTA92.Product AttributesBrand: JSMICRO SemiconductorPackage: SOT-23 Plastic PackageComplementary Type: MMBTA92 (PNP)Technical SpecificationsParameterSymbolValueUnitConditionsCollector Base VoltageVCBO200VCollector Emitter VoltageVCEO200VEmitter Base VoltageVEBO6VCollector CurrentIC500mAPower
Silicon PNP Darlington Power Transistor JSMSEMI MJD127T4G-JSM for Amplifier and Switching Applications
Product OverviewThe MJD127T4G is a Silicon PNP Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, high DC current gain, and is 100% avalanche tested, ensuring robust device performance and reliable operation. The lead is formed for surface mount applications.Product AttributesBrand: JSMICRO SemiconductorMaterial: SiliconTechnical SpecificationsParameterSymbolCondition
PNP silicon power transistor JSMSEMI TIP42C suitable for medium power linear switching applications
Product OverviewThe TIP42 series is a complementary PNP silicon power transistor in a TO-220 plastic package, designed for medium power linear switching applications. It offers robust performance for amplification tasks.Product AttributesBrand: JSMICRO SemiconductorComplementary to: TIP41Technical SpecificationsParameterSymbolTIP42TIP42ATIP42BTIP42CUnitTest ConditionsMinTypMaxCollector to Base VoltageVCBO-40-60-80-100VCollector to Emitter VoltageVCEO-40-60-80-100VEmitter to
Silicon Epitaxial Planar Type Transistor JSMSEMI SS8050 Suitable for Circuits Requiring 1.5A Current
Product OverviewThe JSMICRO Semiconductor SS8050 is a Silicon Epitaxial Planar Transistor designed for high collector current applications. It offers a continuous collector current of 1.5A and is complementary to the SS8550 transistor. This device is suitable for various electronic circuits requiring robust current handling capabilities.Product AttributesBrand: JSMICRO SemiconductorModel: SS8050Material: Silicon Epitaxial PlanarPackage Type: TO-92Origin: Not specifiedColor:
PNP Power Transistor JSMSEMI 2SA1492 Semiconductor Component for Audio and General Purpose Circuits
Product OverviewThe JSMICR0 Semiconductor PNP Power Transistor 2SA1492 is a high-performance component designed for audio and general-purpose applications. It features a high Collector-Emitter Breakdown Voltage of -180V (Min) and good linearity of hFE, making it a reliable choice for demanding circuits. It is a complement to the 2SC3856 type.Product AttributesBrand: JSMICR0Type: Semiconductor PNP Power TransistorModel: 2SA1492Origin: Not specifiedMaterial: Not specifiedColor:
High Current Gain Silicon NPN Transistor JSMSEMI 2N3055 Designed for Switching and Amplifier Applications
Product OverviewThe JSMICRO Semiconductor 2N3055 is a Silicon NPN Power Transistor designed for general-purpose switching and amplifier applications. It offers an excellent Safe Operating Area, a DC Current Gain (hFE) of 20-70 at IC = 4A, and a Collector-Emitter Saturation Voltage (VCE(sat)) of 1.1V (Max) at IC = 4A. It is a complement to the 2N2955 type.Product AttributesBrand: JSMICRO SemiconductorModel: 2N3055Material: Silicon NPNOrigin: Not specifiedColor: Not specifiedCe
Silicon NPN Power Transistor JSMSEMI TIP3055 90W Dissipation 15A Collector Current TO247 Package Type
Product OverviewThe TIP3055 is a silicon NPN power transistor designed for general-purpose switching and amplifier applications. It offers a robust 90W power dissipation at 25C case temperature and a continuous collector current of 15A. This transistor is the complement to the TIP2955 type.Product AttributesBrand: JSMICRO SemiconductorPackage: TO-247Material: SiliconTechnical SpecificationsSymbolParameterConditionsValueUnitVCEO(SUS)Collector-emitter sustaining voltageIC=30mA
NPN Transistor JSMSEMI S9013 Silicon Epitaxial Planar Type with 25V Collector Emitter Voltage Rating
Product OverviewThe S9013 is an NPN Silicon Epitaxial Planar Transistor designed for applications requiring high collector current. It offers excellent HFE linearity and is complementary to the S9012 transistor. With a power dissipation of 300mW, it is suitable for various electronic circuits.Product AttributesBrand: JSMICRO SemiconductorMaterial: Silicon Epitaxial PlanarPackage: SOT-23Technical SpecificationsParameterSymbolTest conditionsValueUnitsCollector-Base VoltageVCBO4
transistor JSMSEMI NJW0302G-JSM for audio power amplifiers and various electronic circuit applications
Product OverviewThe NJW0281G/NJW0302G are semiconductor discrete devices designed for general amplification circuits, audio power amplifiers, power supply regulation, and other electronic circuits. These transistors offer high breakdown voltage, low leakage current, and superior frequency characteristics, making them suitable for demanding applications.Product AttributesBrand: JSMICRO SemiconductorModel Numbers: NJW0281G, NJW0302GProduct Type: Semiconductor Discrete
NPN Power Transistor with High Voltage Capacity JSMSEMI MJE350G Collector Emitter Sustaining Voltage
Product OverviewThe MJE350G is an NPN Power Transistor designed for high voltage and general purpose applications. It offers a high collector-emitter sustaining voltage of -300V, a minimum DC current gain of 100 at -50mA, and a low collector saturation voltage of -1.0V (Max.) at -50mA. This transistor is the complement to the NPN MJE340.Product AttributesBrand: JSMICRO SemiconductorModel: MJE350GType: NPN Power TransistorTechnical SpecificationsSymbolParameterConditionsMinMax
JSMSEMI BC847 JSM NPN transistor suitable for switching amplification and AF input stage applications
Product OverviewThe BC846/847/848 series are NPN general-purpose transistors designed for a wide range of applications. They offer high current gain, excellent hFE linearity, and low noise characteristics, making them suitable for AF input stages, driver applications, and general-purpose switching and amplification.Product AttributesBrand: JSMICRO SemiconductorPackage: SOT-23Technical SpecificationsType No.MarkingCollector-Base Voltage (V)Collector-Emitter Voltage (V)Emitter
NPN Transistor JSMSEMI BC846B with SOT 23 Package Providing Switching and Amplification Performance
Product OverviewThe BC846/847/848 series are NPN general-purpose transistors designed for a wide range of applications. They offer high current gain, excellent hFE linearity, and low noise characteristics, making them suitable for AF input stages, driver applications, and general-purpose switching and amplification.Product AttributesBrand: JSMICRO SemiconductorPackage: SOT-23Technical SpecificationsTypeMarkingPackageVCBO (V)VCEO (V)VEBO (V)IC (A)PC (mW)RJA (/W)TJ, TSTG ()V(BR
High power PNP transistor JSMSEMI MJ15025-JSM for audio and disk head positioner applications in TO-3 package
Product OverviewThe MJ15023-MJ15025 series are PNP power transistors designed for high power audio, disk head positioners, and other linear applications. They feature a high DC current gain (hFE = 15 Min @ IC = 8A), an excellent safe operating area, and are complementary to MJ15022 and MJ15024 types. Packaged in a TO-3 case.Product AttributesBrand: JSMICRO SemiconductorPackage Type: TO-3Technical SpecificationsSymbolParameterConditionsMJ15023 ValueMJ15025 ValueUnitVCEO(SUS
Power Transistor JSMSEMI MJE340G NPN Type with 100 DC Current Gain and 1 Volt Collector Saturation Voltage
Product OverviewThe MJE340G is an NPN Power Transistor designed for high voltage and general purpose applications. It features a Collector-Emitter Sustaining Voltage of 300V (Min), a DC Current Gain of 100 (Min) @ IC=50mA, and a low Collector Saturation Voltage of 1.0V (Max.) @ IC=50mA. It is a complement to the PNP MJE350.Product AttributesBrand: JSMICRO SemiconductorModel: MJE340GType: NPN Power TransistorTechnical SpecificationsSymbolParameterConditionsMinMaxUnitVCEO(SUS
Low Frequency Amplifier Transistor JSMSEMI A1015 Silicon Epitaxial Planar with High Current and Voltage Ratings
Product OverviewThe A1015 is a Silicon Epitaxial Planar Transistor designed as a complementary device to the 2SC1815. It offers excellent HFE linearity, high voltage and current capabilities, and low noise performance. With a Collector-Emitter voltage (BVCEO) of -50V, it is suitable for low frequency, low noise amplifier applications.Product AttributesBrand: JSMICRO SemiconductorPackage Type: SOT-23Complementary To: 2SC1815Technical SpecificationsParameterSymbolTest
High power NPN transistor JSMSEMI MJ15022G-JSM designed for disk head positioners and audio circuits
Product OverviewThe MJ15022/15024G are NPN power transistors designed for high power audio, disk head positioners, and other linear applications. They feature an excellent safe operating area and high DC current gain. These transistors are complements to the MJ15023G and MJ15025G types and come in a TO-3 package.Product AttributesBrand: JSMICRO SemiconductorPackage Type: TO-3Technical SpecificationsSymbolParameterConditionsMJ15022GMJ15024GUnitVCEO(SUS)Collector-emitter
High voltage PNP transistor JSMSEMI MMBTA92 ideal choice for medium power switching and amplification
Product OverviewThe MMBTA92 is a PNP high voltage amplifier transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications, particularly in high voltage driver circuits. A complementary NPN type, the MMBTA42, is also available.Product AttributesBrand: JSMICRO SemiconductorPackage Type: SOT-23Technical SpecificationsSymbolParameterTest ConditionsMin.Max.UnitMAXIMUM RATING @ Ta=25VCBOCollector-base voltage
Medium power amplification switching transistor JSMSEMI MMBT5551 NPN epitaxial planar die technology
Product OverviewThe MMBT5551 is an NPN general-purpose transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications. A complementary PNP type (MMBT5401) is available, and a lead-free version is also offered.Product AttributesBrand: JSMICRO SemiconductorPackage Type: SOT-23Certifications: Lead-free version availableTechnical SpecificationsSymbolParameterTest ConditionsMin.Max.UnitV(BR)CBOCollector-base breakdown
High Collector Current NPN Transistor JSMSEMI S8050 with Excellent HFE Linearity and Complementary S8550
Product OverviewThe S8050 is an NPN Silicon Epitaxial Planar Transistor designed for applications requiring high collector current. It offers excellent HFE linearity and high total power dissipation, making it a complementary part to the S8550. This transistor is suitable for various high collector current applications.Product AttributesBrand: JSMICRO SemiconductorMaterial: Silicon Epitaxial PlanarPackage Type: SOT-23Complementary Part: S8550Technical SpecificationsParameterS
High power audio linear application transistor JSMSEMI MJ15024G JSM NPN power transistor TO3 package
Product OverviewThe MJ15022/15024 are NPN power transistors designed for high power audio, disk head positioners, and other linear applications. They feature a TO-3 package, complement to MJ15023/MJ15025, excellent safe operating area, and high DC current gain.Product AttributesBrand: JSMICRO SemiconductorPackage Type: TO-3Complementary Types: MJ15023, MJ15025Technical SpecificationsSymbolParameterConditionsMJ15022MJ15024UnitAbsolute Maximum RatingsVCBOCollector-base