Single Bipolar Transistors
PNP Bipolar Transistor Guangdong Hottech SS8550 Featuring High Collector Current and Compact Design
Product OverviewThe SS8550 is a PNP bipolar transistor designed for surface mount applications. It offers excellent hFE linearity and high collector current capabilities, making it a complementary device to the SS8050. This transistor is suitable for various electronic circuits requiring robust performance in a compact SOT-23 package.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDComplementary to: SS8050Case Material: Molded PlasticFlammability Classification:
Guangdong Hottech BC81740 transistor offering low collector emitter saturation voltage and high gain
BC817 NPN Bipolar Transistor The BC817 is an NPN bipolar transistor designed for surface mount applications. It offers complementary pairing with the BC807, high collector current capability, low collector-emitter saturation voltage, and high current gain. This device is suitable for various electronic circuits requiring a general-purpose NPN transistor in a compact SOT-23 package. Product Attributes Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD Complementary to: BC807 Case
Medium power PNP transistor Guangdong Hottech BCX53 AH HD with molded plastic case and surface mount
Product OverviewThe BCX51/BCX52/BCX53 series are PNP bipolar transistors designed for medium power general purpose applications. They offer high current and low voltage capabilities, making them suitable for drive stages of audio amplifiers. These devices are complementary to the BCX54/BCX55/BCX56 series and are available in a surface mount SOT-89 package.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDPackage: SOT-89Case Material: Molded PlasticUL Flammability
SOT23 PNP transistor Guangdong Hottech FMMT591 low equivalent on resistance for electronic circuit
Product OverviewThe FMMT591 is a PNP bipolar transistor housed in a SOT-23 package. It offers low equivalent on-resistance, making it suitable for various electronic applications. The device is marked with '591'.Product AttributesBrand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTDOrigin: ChinaPackage Type: SOT-23Technical SpecificationsParameterSymbolTest conditionsMINTYPMAXUnitsMAXIMUM RATINGS (TA=25 unless otherwise noted)Collector-Base VoltageVCBO-80VCollector-Emitter VoltageVCEO
PNP transistor FUXINSEMI MMBT5401 in SOT23 package optimized for medium power amplification switching
MMBT5401 TRANSISTOR (PNP) SOT-23The MMBT5401 is a PNP transistor in a SOT-23 package, designed for medium power amplification and switching applications. It is complementary to the MMBT5551 transistor.Product AttributesMarking: 2LTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitMaximum RatingsVCBOCollector-Base Voltage-160VVCEOCollector-Emitter Voltage-150VVEBOEmitter-Base Voltage-5VICCollector Current-0.6APCCollector Power Dissipation0.3WRJAThermal
Silicon Plastic Medium Power Transistor FUXINSEMI BCP56T1G PNP Type 80V 1A SOT223 Package
Product OverviewBCP54/55/56T1G series are NPN/PNP Silicon Plastic Medium Power Transistors designed for general purpose applications.Product AttributesBrand: Onsemi (implied by T1G suffix, common for Onsemi)Technical SpecificationsModelTypeCollector Current (Max)Collector-Emitter Voltage (Max)Power Dissipation (Max)PackageBCP54T1GNPN-1A-45V625mWSOT-223BCP55T1GPNP-1A-45V625mWSOT-223BCP56T1GPNP-1A-80V625mWSOT-2232306191402_FUXINSEMI-BCP56T1G_C7422630.pdf
Medium power amplification switching transistor FUXINSEMI MMBT5551 NPN silicon type with SOT23 package
Product OverviewThe MMBT5551 is a high voltage NPN silicon transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5401 and offers excellent performance characteristics.Product AttributesBrand: FUXINSEMICONDUCTORType: NPN Silicon TransistorPackage: SOT-23Complementary to: MMBT5401Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-Base Breakdown VoltageV(BR)CBOIC=100A, IE=0180VCollector-Emitter
Electronic Component FUXINSEMI KSP13 NPN Darlington Transistor with 30 Volt Collector Base Voltage
KSP13 NPN Darlington TransistorThe KSP13 is an NPN Darlington transistor, complementary to the KSP63. It is designed for various electronic applications requiring high current gain.Product AttributesBrand: Fuxin Semiconductor (inferred from www.fuxinsemi.com)Complementary Part: KSP63Technical SpecificationsParameterSymbolConditionsMinTypMaxUnitCollector-Base VoltageBVCBOIC = 100 A, IE = 030VCollector-Emitter VoltageBVCEOIC = 1mA, IB = 030VEmitter-Base VoltageBVEBOIE = 100 A,
NPN Transistor SOT23 Package FUXINSEMI MMBTA42 Suitable for Switching and Amplification Applications
MMBTA42 TRANSISTOR (NPN) The MMBTA42 is an NPN transistor in a SOT-23 package, designed for high performance applications. It features a high breakdown voltage, low collector-emitter saturation voltage, and serves as a complementary part to the MMBTA92 (PNP). The device is suitable for various electronic circuits requiring reliable switching and amplification. Product Attributes Brand: FUXINSEMICONDUCTOR Package: SOT-23 Technical Specifications Parameter Symbol Test
FUXINSEMI 2SC2383 RANGE 160 320 high voltage transistor designed for operation in electronic circuits
Product OverviewThe 2SC2383 is a high-voltage NPN transistor featuring a VCEO of 160V and a large continuous collector current capability. It is suitable for various electronic applications requiring robust performance and reliability.Product AttributesBrand: FUXINModel: 2SC2383Package: SOT-89-3LMarking: 2383Technical SpecificationsParameterSymbolTest ConditionsMinMaxUnitCollector-Base VoltageVCBO160VCollector-Emitter VoltageVCEO160VEmitter-Base VoltageVEBO6VCollector Current
PNP Transistor FUXINSEMI MMBT3906 Electronic Component Semiconductor Device for Circuit Applications
PNP TransistorProduct Description: PNP TransistorProduct Attributes:SpecificationValueTypePNP Transistor2309251405_FUXINSEMI-MMBT3906_C2984759.pdf
NPN Transistor FUXINSEMI CXT5551 Suitable for in Amplifier Circuits and Electronic Switching Devices
Product OverviewNPN Transistor CXT5551Product AttributesBrand: CXTType: NPN TransistorTechnical SpecificationsModelTypeCXT5551NPN2310191804_FUXINSEMI-CXT5551_C18723431.pdf
NPN transistor FUXINSEMI MMBT3904LT1G designed for small signal amplification and switching circuits
Product OverviewThe MMBT3904LT1G is a general-purpose NPN bipolar transistor designed for a wide range of applications. Its small signal capabilities make it suitable for amplification and switching tasks in various electronic circuits.Product AttributesBrand: ON SemiconductorOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsPart NumberTypePolarityCollector-Emitter Voltage (Vceo)Collector Current (Ic)Power
High gain NPN transistor FUXINSEMI BC81725 in SOT23 package designed for switching and amplification
Product OverviewThe BC817 is a general-purpose NPN silicon transistor in a SOT-23 package. It is ideally suited for automatic insertion and features an epitaxial planar die construction. A complementary PNP type (BC807) is also available.Product AttributesBrand: Fuxin Semiconductor (implied by URL)Package Type: SOT-23Transistor Type: NPN SiliconComplementary Type: BC807 (PNP)Technical SpecificationsSymbolParameterTest conditionsMinTypMaxUnitVCBOCollector-base breakdown
High Gain Silicon NPN Transistor FUXINSEMI S9018 Suitable for FM VHF Amplifier and Oscillator Circuits
S9018 General Purpose TransistorThe S9018 is an NPN silicon general-purpose transistor designed for AM/FM amplifier and local oscillator applications in FM/VHF tuners. It offers high current gain and a significant bandwidth product.Product AttributesBrand: FuxinsemiMaterial: SiliconType: NPN TransistorPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-Base VoltageVCBO30VCollector-Emitter VoltageVCEO15VEmitter-Base VoltageVEBO5VCollecto
General purpose bipolar junction transistor PNP type FUXINSEMI MMBT4403 in small outline SOT23 package
MMBT4403 Transistor (PNP)The MMBT4403 is a PNP bipolar junction transistor designed for general-purpose applications. Its small outline package makes it suitable for space-constrained designs.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsPart NumberTypePolarityPackageMMBT4403Bipolar Junction TransistorPNPSOT-232310201432_FUXINSEMI-MMBT4403_C3018504.pdf
Dual transistor PNP PNP SOT363 package featuring FUXINSEMI BCM857BS for compact electronic circuits
Product OverviewThe BCM8 57 BS 420 240 is a dual PNP+PNP transistor housed in a SOT-363 package. It offers the advantage of integrating two transistors into a single component, thereby reducing the number of components and board space required. This configuration also ensures no mutual interference between the transistors, making it suitable for applications where space and component count are critical.Product AttributesMarking: 3FType: DUAL TRANSISTOR (PNP+PNP)Package: SOT
TO92 Package NPN Transistor for Power Switching Applications FUXINSEMI FS13001 Electronic Component
Product OverviewThe FS13001 is an NPN transistor designed for power switching applications. Its TO-92 package makes it suitable for various electronic circuits requiring efficient power handling.Product AttributesBrand: Fuxin SemiconductorModel: FS13001Type: NPN TransistorPackage: TO-92Technical SpecificationsSymbolParameterTest conditionsMinTypMaxUnitVCBOCollector-Base Voltage600VVCEOCollector-Emitter Voltage420VVEBOEmitter-Base Voltage7VICCollector Current - Continuous0
SOT23 packaged transistor FUXINSEMI S8550 designed for surface mount and complementary to S8050 transistor
Product OverviewThis product is a high collector current transistor, complementary to the S8050, designed for general-purpose applications. It features a SOT-23 package for surface mounting.Product AttributesBrand: FUXINSEMICONDUCTORPackage Type: SOT-23Complementary to: S8050Technical SpecificationsParameterSymbolTest ConditionsMinMaxUnitCollector-Base VoltageVCBO-40VCollector-Emitter VoltageVCEO-25VEmitter-Base VoltageVEBO-5VCollector CurrentIC-0.5ACollector Power Dissipatio
High collector current complementary PNP transistor FUXINSEMI SS8550-TA designed for general purpose
Product OverviewThe SS8550-TA is a complementary PNP bipolar transistor designed for general-purpose applications. It features high collector current capability and is complementary to the SS8050 NPN transistor.Product AttributesBrand: FUXINOrigin: (Not specified)Material: (Not specified)Color: (Not specified)Certifications: (Not specified)Technical SpecificationsSymbolParameterTest ConditionsMinTypMaxUnitV(BR)CBOCollector-base breakdown voltageIC=-100A, IE=0-40VV(BR)CEOIC=-0