Single Bipolar Transistors
Switching and amplification transistor MDD Microdiode Semiconductor MMBT5401 PNP type in SOT23 package
Product OverviewThe MMBT5401 is a PNP bipolar transistor in a SOT-23 plastic-encapsulated package. It is complementary to the MMBT5551 and is ideal for medium power amplification and switching applications.Product AttributesBrand: MicrodiodePackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-Base VoltageVCBO-160VCollector-Emitter VoltageVCEO-160VEmitter-Base VoltageVEBO-5VCollector CurrentIC-0.6ACollector Power DissipationPC(Ta=25)0
General Purpose NPN Transistor NH DTC113ZCA with Compact SOT23 Package and 0.1A Collector Current
Product OverviewThe DTC113ZCA is an NPN transistor from Niuhang Specification Electronic Co. Ltd, designed for general-purpose applications. It features a compact SOT-23 package and offers reliable performance with a collector current of 0.1A.Product AttributesBrand: Niuhang Specification Electronic Co. LtdPackage: SOT-23Epoxy UL: 94V-0Mounting Position: AnyWeight: approx. 0.01gTechnical SpecificationsSymbolCharacteristicTest ConditionMin.Typ.Max.UnitVCCSupply Voltage-5-
Compact SOT-23 package PNP transistor NH MMBT4403 designed for general purpose switching applications
Product OverviewThe MMBT4403 is a PNP switching transistor designed for general-purpose applications. It comes in a compact SOT-23 package and offers reliable performance for various electronic circuits.Product AttributesBrand: Niuhang Specification Electronic Co. LtdPackage: SOT-23Epoxy UL Rating: 94V-0Mounting Position: AnyWeight: approx. 0.01gDevice Marking: MMBT4403Origin: China (implied by company name and website)Technical SpecificationsParameterSymbolTest ConditionMin
SOT363 Package Nexperia PUMH11-QX NPN Resistor Equipped Transistor for Automotive Peripheral Driving
Product Overview The Nexperia PUMH11-Q is an NPN/NPN Resistor-Equipped Transistor (RET) housed in a compact SOT363 (SC-88) SMD plastic package. It offers a 100 mA output current capability and features built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. Qualified according to AEC-Q101, it is recommended for automotive applications, including low current peripheral driving, control of IC inputs, and as a replacement
High Current Gain PNP Darlington Transistor Minos TIP147 Ideal for Switching and Amplification Tasks
Product Overview This PNP Darlington transistor is designed for general-purpose applications. It offers a high current gain and is suitable for various switching and amplification tasks in electronic circuits. Product Attributes Brand: MNS Origin: Shenzhen Minos (Shenzhen Minos Technology Co., Ltd.) Technical Specifications Parameter Symbol Description Min Typical Max Unit Test Conditions Collector-Emitter Sustaining Voltage VCEO(SUS) -100 V IC=-30mA, IB=0 Collector Cutoff
PNP transistor MDD Microdiode Semiconductor B772 in SOT89 3L package for general electronic circuits
Product OverviewThe B772 is a PNP transistor in a SOT-89-3L package, designed for general-purpose applications. It offers power dissipation capabilities and is suitable for various electronic circuits.Product AttributesBrand: Microdiode (implied by URL)Package: SOT-89-3LTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitMAXIMUM RATINGSCollector-Base VoltageVCBO-40VCollector-Emitter VoltageVCEO-30VEmitter-Base VoltageVEBO-6VCollector Current-ContinuousIC
Nexperia PMBT4401 215 transistor with 600 mA collector current and AEC Q101 automotive qualification
Product Overview The Nexperia PMBT4401 is an NPN switching transistor designed for industrial and consumer switching applications. It features high current capability (up to 600 mA) and low voltage operation (up to 40 V). This transistor is AEC-Q101 qualified, making it suitable for automotive applications. Its PNP complement is the PMBT4403. Product Attributes Brand: Nexperia Product Type: NPN Switching Transistor Package Type: SOT23 (plastic, surface-mounted device)
SOT-23 package PNP transistor MDD Microdiode Semiconductor MMBTA92 designed for high voltage electronics
Product OverviewThe MMBTA92 is a PNP transistor in a SOT-23 plastic-encapsulated package. It is a high-voltage transistor designed for various electronic applications.Product AttributesBrand: microdiode.comPackage Type: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMinMaxUnitMaximum RatingsVCBO-300VVCEO-300VVEBO-5VICContinuous-0.3APC*Collector Power Dissipation(Ta=25)300mWTJJunction Temperature150Storage TemperatureTstg-55150RJAThermal Resistance, junction to
MDD Microdiode Semiconductor BC81740 NPN Transistor Offering Low Saturation Voltage in Compact SOT23
BC817 SOT-23 Plastic-Encapsulate TransistorThe BC817 is an NPN transistor designed for general AF applications. It offers high collector current, high current gain, and low collector-emitter saturation voltage. Its complementary type is the BC807 (PNP). Available in BC817-16, BC817-25, and BC817-40 variants, it is housed in a SOT-23 package.Product AttributesBrand: microdiodePackage: SOT-23Technical SpecificationsParameterSymbolTest conditionsMINMAXUNITMAXIMUM RATINGSCollecto
Microdiode Semiconductor SS8050 NPN Transistor Plastic Encapsulated General Purpose SOT23 Package
SS8050 TransistorThe SS8050 is an NPN plastic-encapsulated transistor designed for general-purpose applications. It is complementary to the SS8550 transistor.Product AttributesBrand: MicrodiodePackage Type: SOT-23Marking: Y1Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-Base VoltageVCBO40VCollector-Emitter VoltageVCEO25VEmitter-Base VoltageVEBO5VCollector Current-ContinuousIC1.5ACollector Power DissipationPC0.3WJunction TemperatureTj150Storage
MDD Microdiode Semiconductor S9013 NPN Transistor Featuring Excellent hFE Linearity in SOT23 Package
Product OverviewThe S9013 is an NPN transistor in a SOT-23 plastic-encapsulated package. It features high collector current, complementary characteristics to the S9012, and excellent hFE linearity. This transistor is suitable for various electronic applications requiring amplification and switching.Product AttributesBrand: Microdiode (implied by URL)Package Type: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-Base VoltageVCBO40VCollector
General Purpose PNP Darlington Transistor Minos TIP147T with High Current Gain in TO220 Package
Product Overview This PNP Darlington transistor is designed for general-purpose applications. It offers high current gain and is suitable for various electronic circuits requiring amplification or switching. The device is packaged in a TO-220 form factor. Product Attributes Brand: MNS (Shenzhen Minos) Origin: China (Shenzhen) Package Type: TO-220 Technical Specifications Parameter Symbol Description Min Typical Max Unit Test Conditions Absolute Maximum Ratings (Ta=25) Storage
PNP high voltage transistor Nexperia PMBTA92 215 in compact SOT23 package for telephony applications
Product Overview The Nexperia PMBTA92 is a PNP high-voltage transistor designed for surface-mounted applications. Housed in a compact SOT23 plastic package, this transistor offers a low current capability of up to 100 mA and a high voltage rating of up to 300 V. It is an ideal component for applications in telephony and professional communication equipment. Its NPN complement is the PMBTA42. Product Attributes Brand: Nexperia Product Type: PNP high-voltage transistor Package
Low Collector Emitter Saturation Voltage Transistor Nexperia PBHV8540X 115 with High DC Current Gain
Product Overview The Nexperia PBHV8540X is an NPN high-voltage, low VCEsat transistor designed for medium power applications. Packaged in an SOT89 (SC-62) surface-mounted device (SMD) plastic package, this transistor offers high voltage capability and a low collector-emitter saturation voltage (VCEsat). It features high collector current capability (IC and ICM) and high DC current gain (hFE) at high IC. The PBHV8540X is AEC-Q101 qualified, making it suitable for automotive
Integrated Damping Diode NPN Silicon Transistor Minos TIP102 for High Gain Current Amplification Applications
Product Overview This NPN Silicon Transistor is a Darlington transistor with an integrated damping diode, designed for high-gain circuits. It is suitable for applications requiring significant current amplification. Product Attributes Brand: MNS Type: NPN Silicon Transistor Package: TO-220 Technical Specifications Parameter Symbol Symbol Description Min Typical Max Unit Test Conditions Storage Temperature Tstg -65 150 Ta=25 Junction Temperature Tj 150 Collector Dissipation
High Gain Amplification Transistor Minos TIP122 NPN Silicon Darlington with Integrated Damping Diode
Product Overview This NPN Silicon Transistor is a Darlington transistor with an integrated damping diode, designed for high-gain circuits. It is suitable for applications requiring high amplification factors. Product Attributes Brand: Shenzhen Minos () Type: NPN Silicon Transistor Construction: Darlington Integrated Component: Damping Diode Origin: Shenzhen, China Technical Specifications Parameter Symbol Description Min Typical Max Unit Test Conditions Absolute Maximum
High collector voltage npn transistor Minos TTC5200 designed for power amplifier and audio frequency
Product Overview The TTC5200 Minos Silicon NPN Triple Diffused Type is designed for power amplifier applications, specifically recommended for 100-W high-fidelity audio frequency amplifier output stages. It serves as a complementary component to the TTA1943 and features a high collector voltage of 230V (min). Note: Continuous operation under heavy loads, such as high temperature, current, or voltage, or significant temperature changes, may significantly reduce product
MDD Microdiode Semiconductor MMBT3906 PNP Transistor SOT523 Package Ideal for Switching Applications
Product OverviewThe MMBT3906T is a PNP bipolar transistor in a SOT-523 package, designed for medium power amplification and switching applications. It serves as a complementary device to the MMBT3904T, offering a small surface mount package ideal for compact electronic designs.Product AttributesBrand: MicrodiodeComplementary to: MMBT3904TPackage Type: SOT-523Encapsulation: PlasticMarking: 3NTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-Base
NPN transistor MDD Microdiode Semiconductor S8050 with 500 mA collector current and SOT23 package type
S8050 TRANSISTOR (NPN) The S8050 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a continuous collector current of 500 mA and a collector power dissipation of 300 mW. It is complementary to the S8550 transistor. Product Attributes Brand: Microdiode Package Type: SOT-23 Transistor Type: NPN Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Collector-Base Voltage VCBO (Ta=25 unless otherwise noted) 40 V
RoHS Compliant MCC BCX56-16-TP NPN Plastic Encapsulated Transistor with UL 94 V0 Flammability Rating
Product OverviewThe BCX56 series are NPN plastic encapsulated transistors designed for various electronic applications. They offer features such as Halogen Free availability, Moisture Sensitivity Level 1, and compliance with UL 94 V-0 flammability rating. These transistors are RoHS compliant.Product AttributesBrand: MCCSEMIMaterial: Plastic EncapsulateCertifications: RoHS Compliant, UL 94 V-0 Flammability RatingAvailability: Halogen Free Available Upon Request (add "-HF"