Single FETs, MOSFETs
N Channel Enhancement Mode MOSFET MIRACLE POWER MU3011D Ideal for PWM Applications and Power Control
Product Overview The MU3011D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 30V drain-source voltage, 90A continuous drain current, and a low typical on-resistance of 3.4m at VGS = 10V. This MOSFET utilizes advanced trench technology, offering excellent RDS(ON) and low gate charge. It is suitable for applications such as load switching, PWM applications, and power management. Product Attributes Brand: Miracle Technology Co., Ltd.
High Current Capacity MOSFET MIRACLE POWER MS0005C with 100V Voltage and Low Gate Charge Technology
Product Overview The MS0005C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring 100V drain-source voltage and 260A continuous drain current. It offers excellent RDS(on) of 1.8m (Typ.) at VGS = 10V and low gate charge, enabled by advanced trench technology. This MOSFET is ideal for applications such as load switching, quick/wireless charging, motor driving, current switching in DC/DC & AC/DC (SR) subsystems, and power management in computing,
Load Switch and PWM Application MOSFET N Channel MIRACLE POWER MS0009B with 100V Drain Source Voltage
Product Overview The MS0009B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 100V drain-source voltage and a continuous drain current of 135A at 25C case temperature, with a low on-resistance of 4.4m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, with 100% EAS guaranteed. It is suitable for applications such as Load Switches, PWM applications, and Power Management. The device is halogen-free and RoHS
Silicon N Channel MOSFET Minos IRFP240 Ideal for Switch Mode Power Supplies and High Speed Electronics
Product OverviewThe IRFP240 is a silicon N-channel Enhanced MOSFET utilizing advanced technology to minimize conduction losses, enhance switching performance, and improve avalanche energy. It is well-suited for applications such as Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose electronics.Product AttributesCertifications: RoHS productTechnical SpecificationsParameterValueUnitDescriptionVDS200VDrain-to-Source VoltageID18AContinuous Drain
Minos IRF9530NS MNS P Channel Power MOSFET featuring low RDS ON and high avalanche energy capability
Product OverviewThe IRF9530NS is a P-Channel Power MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Key features include a VDS of -100V, ID of -20A, and low RDS(ON) values of
N Channel MOSFET MIRACLE POWER MU3010X with 30V Drain Source Voltage and Thermal Characteristics
Product Overview The MU3010X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as load switching, PWM applications, and power management, providing a robust solution with a 30V drain-source voltage and a continuous drain current of 40A. Its lead-free construction and efficient thermal characteristics make it a reliable
500V Breakdown Voltage N Channel MOSFET MIRACLE POWER MPD05N50A with Low Crss and Continuous Drain Current of 5A
Product Overview The MPD05N50 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. It features a 500V breakdown voltage, a continuous drain current of 5A, and a low on-resistance of 1.35 (typ.) at VGS = 10V. This MOSFET offers fast switching speeds, low Crss, and is 100% avalanche tested, making it suitable for adaptors, standby power supplies, switching power supplies, and LED power applications. Product Attributes
Load Switch MOSFET MIRACLE POWER MU4006D with 80A Continuous Drain Current and 40V Maximum Drain Source Voltage
Product Overview The MU4006D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring 40V drain-source voltage and 80A continuous drain current. It offers excellent RDS(on) of 4.5m (Typ.) at VGS = 10V and low gate charge, thanks to its advanced trench technology. This MOSFET is 100% EAS guaranteed and is suitable for applications such as load switches, PWM applications, and power management. Product Attributes Brand: Miracle Technology Co., Ltd.
Silicon N Channel Power MOSFET Minos MDT4N65 Designed for Switching in Half Bridge Topology Circuits
MDT4N65 Silicon N-Channel Power MOSFETThe MDT4N65 is a Power MOSFET produced using Wisdoms advanced planar stripe, DMOS technology. This technology is designed to minimize on-state resistance and provide high rugged avalanche characteristics. It is well-suited for high efficiency switch mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.Product AttributesBrand: Wisdom (implied by technology description)Origin:
650V 10A N Channel MOSFET MIRACLE POWER MPP10N65 Suitable for Adapter and E Bike Charger Electronics
Product Overview The MPP10N65 is a 650V, 10A N-Channel Power MOSFET from Miracle Technology Co., Ltd. It features low Crss, fast switching, and is 100% avalanche tested. This MOSFET is ideal for applications such as adapters, LCD/PDP adapters, and e-bike chargers. Product Attributes Brand: Miracle Technology Co., Ltd. Product Type: N-Channel Power MOSFET Series: MPP Model: MPP10N65 Technology: Miracle Technology Technical Specifications Parameter Condition Min. Typ. Max. Unit
252 Packaged N Channel Power MOSFET Minos MDT30N10L with 30 Ampere Current and 100 Volt Drain Source
Product OverviewThe MDT30N10L is an N-Channel Power MOSFET utilizing advanced trench technology to deliver excellent RDS(ON) and low gate charge. This high-density cell design ensures ultra-low Rdson and is fully characterized for avalanche voltage and current, providing good stability and uniformity with high EAS. Its excellent package design facilitates efficient heat dissipation, making it suitable for a wide range of applications.Product AttributesBrand: MNS (www.mns-kx
Lateral DMOS transistor MICROCHIP LND150N3 G with integral source drain diode and drive requirements
Product OverviewThe LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertexs lateral DMOS technology. It features ESD protection on the gate and is ideal for high voltage applications such as normally-on switches, precision constant current sources, voltage ramp generation, and amplification. Key advantages include freedom from secondary breakdown, low power drive requirements, ease of paralleling, excellent thermal stability, an integral
High Current N Channel MOSFET Minos IRFR1205TR with Low RDS ON and Superior Heat Dissipation Package
Product OverviewThe IRFR1205TR is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Its high-density cell design, characterized avalanche voltage and current, and excellent package for heat dissipation contribute to its stability and uniformity.Product
N Channel Depletion Mode Vertical DMOS Transistor MICROCHIP DN2470K4 G Suitable for Telecom Equipment
DN2470 N-Channel, Depletion-Mode, Vertical DMOS FET The DN2470 is a low threshold, depletion-mode, normally-on transistor featuring an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure. This device offers high-input impedance, low-input capacitance, and fast switching speeds, making it suitable for a wide range of applications including normally-on switches, solid-state relays, converters, linear amplifiers, constant current sources, battery-operated
Power MOSFET Minos MDT7N65 N Channel Device Suitable for Electronic Lamp Ballasts and Power Supplies
Product DescriptionThe MDT7N65 is a high-performance N-Channel Power MOSFET produced using Wisdom's advanced planar stripe, DMOS technology. This technology is engineered to minimize on-state resistance and provide high rugged avalanche characteristics. It is ideally suited for high-efficiency switch mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topology.Product AttributesBrand: WisdomOrigin: Shenzhen Minos (implied by
Megain MGC021N04L N channel MOSFET designed for Or ing circuits and synchronous rectification in SMPS
Product OverviewThe MGC021N04L is an N-channel MOSFET featuring Advanced Trench MOS Technology. It offers low RDS(ON) and is 100% EAS Guaranteed, making it suitable for applications like SMPS Synchronous Rectification, DC/DC Converters, and Or-ing. A Green Device version is available.Product AttributesBrand: MegainOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterValueUnitsConditionsDrain-Source
MICROCHIP VP2450N8 G vertical DMOS FET offering ease of paralleling and drive for driver applications
Product OverviewThe VP2450 is a low-threshold, P-Channel Enhancement-mode Vertical DMOS FET designed for switching and amplifying applications. It offers advantages such as freedom from secondary breakdown, low power drive requirements, ease of paralleling, low CISS and fast switching speeds, high input impedance and high gain, and excellent thermal stability. This device is ideally suited for motor controls, converters, amplifiers, switches, power supply circuits, and
Power MOSFET Megain MGP038N10N N channel device featuring low RDS ON and high current for switching
Product OverviewThe MGP038N10N is an N-channel MOSFET featuring Advanced Trench MOS Technology, offering super low RDS(ON) and 100% EAS Guaranteed. It is suitable for applications such as Motor Drivers, BMS, and high-frequency switching with synchronous rectification. A Green Device version is available.Product AttributesBrand: MegainOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterValueUnitsConditio
Precision engineered electronic device Megain MGC022N06L for industrial and commercial applications
Product OverviewThe MGC022N06L is a product from Megain, indicated by the website www.megain.com. Further details regarding its function, usage, advantages, and application scenarios are not explicitly provided in the given text.Product AttributesBrand: MegainOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsModelRevMGC022N06L1.02506251635_Megain-MGC022N06L_C49242751.pdf
Power MOSFET NIKO SEM PZ0703EK P Channel Logic Level Enhancement Mode with 30 Volt Drain Source Voltage
Product OverviewThe PZ0703EK is a P-Channel Logic Level Enhancement Mode MOSFET designed for various electronic applications. It offers robust performance with key parameters like Drain-Source Voltage of -30V and a low RDS(ON) of 7m @VGS = -10V. This MOSFET is suitable for applications requiring efficient power switching and control.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical