Single FETs, MOSFETs
Trench Power LV MOSFET Technology Integrated in YANGJIE YJL3407C P Channel Enhancement Mode Transistor
Product OverviewThe YJL3407C is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology for low RDS(ON) and high-speed switching. It is designed for applications such as battery protection, load switching, and power management. This device offers high density cell design, Moisture Sensitivity Level 1, and meets UL 94 V-0 flammability rating, with a Halogen Free design.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co.,
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and peak power capabilities, and integrated ESD protection. Manufactured using Wolfspeed's advanced LDMOS process, it offers a thermally-enhanced package with an earless flange,
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth capabilities. It is suitable for a range of applications from narrow band UHF, L, and S-Band to multi-octave bandwidth amplifiers. The transistor is available in 2-lead flange and pill
Robust N Channel MOSFET Winsok Semicon WSL160N20 Suitable for Synchronous Buck Converter Applications
Product OverviewThe WSL160N20 is a high-performance N-Channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. This device is designed for power management in industrial DC/DC converters and uninterruptible power supplies.Product AttributesBrand: WinsokCertifications: RoHS Compliant,
Low gate charge P channel MOSFET XYD X409CVA designed for motor drive and synchronous rectification
Product OverviewThe X409CVA is a P-CHANNEL MOSFET featuring Trench Power MOSFET technology, offering low RDSON and low gate charge. It is RoHS and Halogen Free compliant and suitable for synchronous rectification, industrial, and motor drive applications.Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Product Name: X409CVACertifications: RoHS and Halogen Free ComplaintPackage: PDFN5*6-8LTechnical SpecificationsParameterSymbolValuesUnitNote/Test ConditionsAb
power management using XYD X14N030TLE2 N Channel MOSFET with low Ciss and fast switching capabilities
Product OverviewThe X14N030TLE2 is an N-Channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features extremely low on-resistance, fast switching, excellent low Ciss, and low gate charge, making it suitable for applications such as synchronous rectification for AC/DC quick chargers, battery management, and Uninterrupible Power Supplies (UPS).Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Product Name: X14N030TLE2Package: TO-252-2LOrdering Code
High Density Cell N Channel MOSFET XDS TX50N06 with Low On Resistance and Effective Heat Dissipation
Product OverviewThe TX50N06 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced technology is optimized to minimize on-state resistance, making these devices particularly suitable for low-voltage applications. Key advantages include ultra-low RDS(on) due to high-density cell design and excellent package performance for effective heat dissipation.Product AttributesBrand: XDSSEMIPackage Type: TO
Power MOSFET YANGJIE YJG20N06A N Channel Transistor with Low On Resistance and Trench MV Technology
Product OverviewThe YJG20N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation through its package design and a high-density cell design for low RDS(ON). This transistor is suitable for applications such as DC-DC converters, power management functions, and backlighting.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Origin: ChinaCertifications: RoHS CompliantTech
High Density Cell Design N Channel Enhancement Mode Transistor YANGJIE YJD120N04A for Power Electronics
Product Overview The YJD120N04A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers excellent heat dissipation due to its package design and a high-density cell design for low RDS(ON). This transistor is suitable for applications such as DC-DC Converters, power management functions, and backlighting. Product Attributes Brand: Yangzhou Yangjie Electronic Technology Co., Ltd. Origin: China Certifications: RoHS
Split Gate Trench MOSFET YANGJIE YJG15G15A N Channel Enhancement Mode Transistor for DC DC Converters
Product OverviewThe YJG15G15A is an N-Channel Enhancement Mode Field Effect Transistor designed with split gate trench MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for switching voltage regulators and DC-DC converters.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Model: YJG15G15ATechnology: Split gate trench MOSFETMoisture Sensitivity Level: 1Flammability Rating:
Split gate trench MOSFET transistor YANGJIE YJG88G12A designed for high current power switching and heat dissipation
Product OverviewThe YJG88G12A is an N-Channel Enhancement Mode Field Effect Transistor featuring Split gate trench MOSFET technology for low RDS(ON) and excellent heat dissipation. It is designed for power switching applications, hard switched and high frequency circuits, and uninterruptible power supply systems.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Model: YJG88G12ATechnology: Split gate trench MOSFETMoisture Sensitivity Level: 1Flammability
Complementary N Channel P Channel MOSFET YANGJIE YJS07NP03B for wireless charging and load switching
Product OverviewThe YJS07NP03B is a complementary N-Channel and P-Channel MOSFET featuring Trench Power LV MOSFET technology for high density cell design, resulting in low RDS(ON) and high-speed switching. It is designed for applications requiring efficient power management, including wireless chargers and load switches. The product meets UL 94 V-0 flammability rating and is Halogen Free.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Model:
N channel MOSFET XYD X7N50DHE2 500V 7A low gate charge fast switching for electronic circuits
Product OverviewThe X7N50DHE2 is a high-performance N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching capabilities, making it ideal for applications such as LED power supplies, cell phone chargers, and standby power systems. This MOSFET offers a 500V drain-source voltage, 7A continuous drain current, and a low on-state resistance of 0.9.Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd
N Channel MOSFET 150V Fast Switching XNRUSEMI XRS180N15H with Excellent Thermal Performance and Low RDS
Product OverviewThe XRS180N15H is a N-Channel 150V Fast Switching MOSFET featuring Split Gate Trench MOSFET technology and an excellent package for heat dissipation. Its high-density cell design ensures low RDS(ON), making it suitable for DC-DC converters, power management functions, and synchronous-rectification applications.Product AttributesBrand: power-mos.comTechnical SpecificationsSymbolParameterConditionsMin.Typ.Max.UnitAbsolute Maximum RatingsVDS Drain-Source
N Channel MOSFET YANGJIE YJG110G10B Designed for Uninterruptible Power Supplies and DC DC Converters
Product OverviewThe YJG110G10B is a N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology with a high-density cell design for low RDS(ON) and excellent heat dissipation. This transistor is suitable for power switching applications, uninterruptible power supplies, and DC-DC converters. It is 100% EAS and VDS tested, moisture sensitivity level 1, and meets UL 94 V-0 flammability
Low RDS ON P Channel MOSFET YANGJIE YJG55P03B for Load Switching and Battery Protection Applications
Product OverviewThe YJG55P03B is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Trench Power LV MOSFET technology with a high-density cell design, it offers low RDS(ON) and high-speed switching capabilities. This transistor is suitable for applications such as battery protection, power management, and load switching. It is designed for reliability, meeting Moisture Sensitivity Level 1 and UL 94 V-0
High current power MOSFET XTX BRP80N120P8 N channel enhancement mode with 80V drain to source voltage
BRP80N120P8 N-channel Enhancement Mode Power MOSFET The BRP80N120P8 is an N-channel enhancement mode power MOSFET from XTX Technology Inc. It offers an 80V drain-to-source voltage and a continuous drain current of 120A. Key features include ultra-low RDS(ON) of less than 5.5m at VGS = 10V, low gate charge, and lead-free construction. This MOSFET is designed for applications such as motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC
Power MOSFET VBsemi Elec IRFR5410TRPBF VB P Channel 100 V designed for switching and DC DC converter
IRFR5410TRPBF-VB P-Channel 100 V MOSFET The IRFR5410TRPBF-VB is a P-Channel Trench Power MOSFET designed for power switching applications. It offers high performance with features such as 100% Rg and UIS tested, and compliance with RoHS Directive 2002/95/EC. This MOSFET is suitable for use in DC/DC converters and other power switching circuits. Product Attributes Brand: VBsemi Certifications: Halogen-free (IEC 61249-2-21), RoHS Directive 2002/95/EC compliant Package: TO-252
Low Gate Charge N Channel Power MOSFET VBsemi Elec HFD4N50-VB with RoHS Compliance and TO 252 Package
HFD4N50-VB Power MOSFETThe HFD4N50-VB is a high-performance N-Channel Power MOSFET designed for simple drive requirements and enhanced ruggedness. It features low gate charge (Qg), improved gate, avalanche, and dynamic dV/dt ruggedness, and fully characterized capacitance, avalanche voltage, and current. This product is compliant with the RoHS directive 2002/95/EC.Product AttributesBrand: VBsemiModel: HFD4N50-VBConfiguration: SingleCertifications: RoHS CompliantPackage: TO
Power Switching Silicon N-channel VDMOSFET XCH XCH2N65M Featuring TO-252 Package and RoHS Compliance
Product DescriptionThe XCH2N65M is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This technology enhances performance by reducing conduction loss, improving switching speed, and increasing avalanche energy. It is designed for various power switching circuits, contributing to system miniaturization and higher efficiency. The device comes in a TO-252 package that complies with RoHS standards.Product AttributesPackage: TO-252RoHS