Field Effect Transistor
Low Gate Charge N Channel Field Effect Transistor With Low Level Drive
Low Gate Charge N Channel Field Effect Transistor With Low Level Drive N Channel Field Effect Transistor Features High input impedance and low level drive Avalanche energy tested Improved dv/dt capability,high ruggedness N Channel Field Effect Transistor Application High power DC/DC converters and switch mode power supplies DC motor control Automotive applications Uninterruptible power supply Absolute Maximum Ratings (Tc=25°C) Symbol Parameters Ratings Unit VDSS Drain-Source
OEM High Power Jfet Transistor , Npn Transistor Amplifier 650V
OEM High Power Jfet Transistor , Npn Transistor Amplifier 650V Power Jfet Transistor Features High input impedance and low level drive Avalanche energy tested Improved dv/dt capability,high ruggedness Low gate charge Low Rdson(typical 5.5mΩ) Fast switching Power Jfet Transistor Applications High efficiency switch mode power supplies Power factor correction Absolute Maximum Ratings (Tc=25°C) Symbol Parameters Ratings Unit VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage
Metal Oxide Semiconductor Field Effect Transistor With RoHS Certificate
Metal Oxide Semiconductor Field Effect Transistor With RoHS Certificate Metal Oxide Semiconductor Field Effect Transistor Features Low gate charge Low Rdson(typical 5.5mΩ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Avalanche energy tested Improved dv/dt capability,high ruggedness Metal Oxide Semiconductor Field Effect Transistor Applications High efficiency switch mode power supplies Electronic lamp ballast Absolute Maximum Ratings (Tc=25°C)
High Input Impedance N Channel Transistor , Field Emission Transistor 600V
High Input Impedance N Channel Transistor , Field Emission Transistor 600V N Channel Transistor Features High input impedance and low level drive Avalanche energy tested Improved dv/dt capability,high ruggedness N Channel Transistor Applications High efficiency switch mode power supplies Power factor correction Electronic lamp ballast Uninterruptible power supply Power switching application Absolute Maximum Ratings (Tc=25°C) Symbol Parameters Ratings Unit VDSS Drain-Source
Organic N Channel Field Effect Transistor For Electronic Lamp Ballast
Organic N Channel Field Effect Transistor For Electronic Lamp Ballast N Channel Field Effect Transistor FeaturesHigh input impedance and low level driveAvalanche energy testedImproved dv/dt capability,high ruggedness Absolute Maximum Ratings (Tc=25°C) SymbolParametersRatingsUnitVDSSDrain-Source Voltage60VVGSGate-Source Voltage-Continuous±20VIDDrain Current-Continuous(Note 2)55AIDMDrain Current-Single Plused(Note 1)200APDPower Dissipation (Note 2)130WTjMax.Operating junction
Mos Audio Mosfet Transistor / High Frequency Transistor Amplifier
Mos Audio Mosfet Transistor / High Frequency Transistor Amplifier Audio Mosfet Transistor ApplicationDC motor controlAutomotive applicationsUninterruptible power supplyAbsolute Maximum Ratings (Tc=25°C) SymbolParametersRatingsUnitVDSSDrain-Source Voltage60VVGSGate-Source Voltage-Continuous±30VIDDrain Current-Continuous(Note 2)50AIDMDrain Current-Single Plused(Note 1)200APDPower Dissipation (Note 2)130WTjMax.Operating junction temperature150℃ Electrical characteristics (Tc=25
2N7002 Field Effect Transistor N Channel Transistor Plastic Encapsulate MOSFETS
Electronic Components A1SHB Transistor 2301 -20V -2.8A SOT-23 P-Channel Product Description The MX2301A uses advanced trench technology to provide excellent RDS, low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. High power and current handing capability Lead free product is acquired Surface mount package Our Company Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000.
Dual N - Channel Field Effect Transistor MXN3312 High Density Cell Design For Power Switching
MXN3312 Field Effect Transistor Dual N - Channel Enhancement Mode Power Mosfet Product Description The MXN3312 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. High density cell design fo ultra low Rdson Fully characterized Avalanche voltage and current Application Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply Bulk packaging data
Surface Mount MX3407 High Power Transistor P - Channel Type RoHS Certificated
Electronic Components MX3407 Field Effect Transistor P Channel In Stock Product Description High power and current handing capability Lead free product is acquired Surface mount package Our Advantage: 1. Electronic component specialist and professional. 2. Strong R & D team, experienced research staffs 3. Strong and consistent quality control, same standard as of RoHS. 4. Elite sales team with more than 5 years international trading experience individually. 5. Strong
Electronic Components Field Effect Transistor MX3401 -30V VDS MOS Tube Surface Mount
electronic components MX3401 transistor -30V -4.2A SOT-23-3L P-channel Description The MX3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component
MX2301 Field Effect Transistor P Channel Triode Enhancement Mode Power MOSFET
Electronic Components A1SHB Transistor 2301 -20V -2.8A SOT-23 P-Channel Product Description The MX2301A uses advanced trench technology to provide excellent RDS, low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. High power and current handing capability Lead free product is acquired Surface mount package Our Company Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000.