Memory IC Chip
TC58NVG1S3HBAI6 2 Gbit Parallel NAND Flash Memory Chip with VFBGA67 Package and Synchronous Timing
TC58NVG1S3HBAI6 Memory IC Chip 2Gbit Parallel NAND Flash Memory Chip in VFBGA67 Package Product Overview The TC58NVG1S3HBAI6 is a single 3.3V 2Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 2048 blocks. This device features two 2176-byte static registers that enable program and read data transfer between the register and memory cell array in 2176-byte increments. Erase
MT52L256M32D1PF-107 WT:B 8Gbit 933 MHz LPDDR3 SDRAM Memory IC Chip with 256 M x 32 Organization in FBGA178 Package
MT52L256M32D1PF-107 WT:B Memory IC Chip 8Gbit Mobile LPDDR3 SDRAM Memory Chip FBGA178 Product Overview The MT52L256M32D1PF-107 WT:B is a mobile LPDDR3 Synchronous Dynamic Random-Access Memory (SDRAM) chip featuring 8Gbit capacity in a compact 178-FBGA (11.5x11) package. Designed for mobile applications requiring high-performance memory solutions. Technical Specifications Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR3 Memory Size 8Gbit Memory
MT52L256M32D1PF-093 WT:B 8Gbit 1067 MHz LPDDR3 Memory IC Chip with 256M x 32 Organization
MT52L256M32D1PF-093 WT:B Memory IC Chip 8Gbit LPDDR3 Synchronous Dynamic Random-Access Memory Product Overview The MT52L256M32D1PF-093 WT:B is an SDRAM - Mobile LPDDR3 memory IC with a capacity of 8Gbit, housed in a compact 178-FBGA (11.5x11) package. This high-performance memory solution is designed for mobile and embedded applications requiring reliable data storage and fast access speeds. Technical Specifications Memory Type Volatile Memory Format DRAM Technology SDRAM -
W631GU6MB-11 Memory IC Chip 1 Gbit Parallel 933 MHz DDR3L SDRAM
W631GU6MB-11 Memory IC Chip 1Gbit Parallel 933MHz DDR3L SDRAM Memory Product Overview The W631GU6MB-11 is a 1Gbit DDR3L SDRAM organized as 8,388,608 words across 8 banks with 16-bit architecture. This high-performance memory device delivers transfer rates up to 2133 MT/s (DDR3L-2133) for diverse industrial and computing applications. Technical Specifications Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 1Gbit Memory Organization 64M x 16 Memory
IS25LP512M-RMLE-TY Memory IC Chip 512Mbit Serial NOR Flash Memory Chip with 133 MHz Clock Frequency and SPI - Quad I/O Interface
IS25LP512M-RMLE-TY Memory IC Chip 512Mbit Serial NOR Flash Memory Chip in SOIC16 Package Product Overview The IS25LP512M-RMLE-TY is a high-performance serial NOR flash memory IC with a capacity of 512Mbit (64M x 8), housed in a compact SOIC-16 package. This non-volatile memory solution offers exceptional performance and reliability for industrial applications. Technical Specifications Specification Details Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR
MT53D768M32D2NP-046 WT:A 24 Gbit LPDDR4 SDRAM Memory IC Chip with 2.133 GHz Speed in WFBGA-200 Package
MT53D768M32D2NP-046 WT:A Memory IC Chip Mobile 24Gbit LPDDR4 SDRAM Memory Chip Product Overview MT53D768M32D2NP-046 WT:A is a mobile LPDDR4 synchronous dynamic random-access memory (SDRAM) chip with a capacity of 24Gbit (768 M x 32), housed in a WFBGA-200 package. Technical Specifications Product Category DRAM Type SDRAM Mobile - LPDDR4 Memory Size 24 Gbit Data Bus Width 32 bit Maximum Clock Frequency 2.133 GHz Package / Case WFBGA-200 Organization 768 M x 32 Supply Voltage -
MX30LF2G18AC-XKI 2 Gbit Non-Volatile NAND Flash Memory IC Chip in VFBGA63 Package
MX30LF2G18AC-XKI Memory IC Chip The MX30LF2G18AC-XKI is a 2Gbit parallel, non-volatile NAND (SLC) Flash Memory IC designed for high-performance applications requiring reliable data storage. Product Specifications Specification Details Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND (SLC) Memory Size 2Gbit Memory Organization 256M x 8 Memory Interface Parallel Write Cycle Time 20ns Access Time 20ns Voltage Supply 2.7V ~ 3.6V Operating Temperature -40°C ~
H9HCNNN8KUML-HRNME Low Power 8Gb LPDDR4 Synchronous DRAM Memory IC Chip in BGA-200 Package
H9HCNNN8KUML-HRNME Memory IC Chip Low Power 8Gb LPDDR4 Synchronous DRAM Memory IC H9HCNNN8KUMLHR-NME is a low power 8Gb LPDDR4 synchronous DRAM memory in BGA-200 package. Product Specifications Memory Size 8Gb Memory Organization 256M x 32 Package BGA-200 Voltage - Supply 1.1V (VDD2, VDDCA, VDDQ) Control Signal Supply Voltage 1.8V (VDD1) Clock Frequency 2.133GHz Equivalent Data Transfer Rate 3733Mbps Operating Temperature -25°C ~ 85°C Product Image Other Available Products
MT29F1G08ABAEAH4:E 1 Gbit Parallel NAND Flash Memory IC Chip with Asynchronous I/O in VFBGA-63 Package
MT29F1G08ABAEAH4:E Memory IC Chip 1Gbit Parallel NAND Flash Memory in VFBGA-63 Package Product Overview The MT29F1G08ABAEAH4:E is a 1Gbit parallel NAND flash memory device packaged in VFBGA-63. This high-performance memory features an asynchronous data interface optimized for efficient I/O operations, utilizing a highly multiplexed 8-bit bus (I/Ox) for transferring commands, address information, and data. Technical Specifications Specification Details Memory Format FLASH
IS43DR16640B-25DBLI 1Gbit 400MHz DDR2 SDRAM Memory IC Chip with 16-bit Data Bus
IS43DR16640B-25DBLI Memory IC Chip 1Gbit Parallel 400MHz SDRAM DDR2 Memory IC Product Overview The IS43DR16640B-25DBLI is a high-performance 1Gbit DDR2 SDRAM memory IC designed for parallel interface applications operating at 400MHz clock frequency. Technical Specifications Specification Details Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR2 Memory Size 1Gbit Memory Organization 64M x 16 Memory Interface Parallel Clock Frequency 400 MHz Write Cycle Time 15ns
EDB4432BBPA-1D-F-R 4Gbit Mobile LPDDR2 SDRAM Memory IC Chip WFBGA168 Package
EDB4432BBPA-1D-F-R Memory IC Chip 4Gbit Mobile LPDDR2 SDRAM Memory Chip in WFBGA168 Package Product Overview The EDB4432BBPA-1D-F-R is a single-channel Mobile LPDDR2 Synchronous Dynamic Random Access Memory (SDRAM) chip with a capacity of 4Gbit, housed in a WFBGA-168 package. Technical Specifications Specification Details Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR2 Memory Size 4Gbit Memory Organization 128M x 32 Memory Interface Parallel Clock
TC58NVG1S3HBAI6 Memory IC Chip 2 Gbit NAND E2PROM with 3.3V Supply and Parallel Interface
TC58NVG1S3HBAI6 Memory IC Chip Single 3.3V 2Gbit NAND Electrically Erasable And Programmable Read-Only Memory Product Overview The TC58NVG1S3HBAI6 is a single 3.3V 2Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E²PROM) organized as (2048 + 128) Bytes × 64 pages × 2048 blocks. The device features two 2176-byte static registers that enable program and read data transfer between the register and memory cell array in 2176-byte
H9HCNNN8KUMLHR-NME 8Gb LPDDR4 SDRAM Memory IC Chip with 2.133 GHz Operating Frequency in FBGA200 Package
H9HCNNN8KUMLHR-NME Memory IC Chip 8GB LPDDR4 SDRAM Memory Chip in FBGA200 Package Product Overview The H9HCNNN8KUMLHR-NME is a high-performance mobile LPDDR4 SDRAM memory IC featuring 8Gb capacity (256M x 32) and operating at 2.133 GHz frequency. This component is housed in a compact 200-FBGA (10x15) package designed for mobile applications. Technical Specifications Specification Details Type Volatile memory Technology DRAM Format SDRAM - Mobile LPDDR4 Capacity 8Gb (256M x 32
NT5CB128M16JR-FL High-Speed Automotive DDR3 SDRAM Memory IC Chip 2Gb BGA96 Package
NT5CB128M16JR-FL Memory IC Chip High-Speed Automotive DDR3 2Gb SDRAM Memory IC Product Overview The NT5CB128M16JR-FL DDR3 SDRAM is a high-speed dynamic random access memory internally configured as an eight-bank DRAM. This automotive-grade memory chip utilizes an 8n prefetch architecture to achieve high-speed operation, combined with an interface designed to transfer two data words per clock cycle at the I/O pins. Technical Features Fully DDR3 Compliant 8n Prefetch Architectu
MT29F2G08ABAEAH4-IT:E 2 Gbit Parallel NAND Flash Memory IC Chip with VFBGA63 Package
MT29F2G08ABAEAH4-IT:E Memory IC Chip 2Gbit Parallel NAND Flash Memory Chip VFBGA63 The MT29F2G08ABAEAH4-IT:E is a 2Gbit parallel NAND Flash memory IC featuring a 63-VFBGA (9x11) package configuration. Product Specifications Specification Details Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND Memory Size 2Gbit Memory Organization 256M x 8 Memory Interface Parallel Voltage Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface
MT52L256M32D1PF-107 WT:B 8 Gbit LPDDR3 SDRAM Mobile Memory IC Chip with 32 bit Data Bus Width in FBGA178 Package
MT52L256M32D1PF-107 WT:B Memory IC Chip 8Gbit LPDDR3 SDRAM Mobile Memory in FBGA178 Package Product Overview MT52L256M32D1PF-107 WT:B is an 8Gbit LPDDR3 Synchronous Dynamic Random Access Memory (SDRAM) chip designed for mobile applications. Technical Specifications Parameter Specification Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR3 Memory Size 8Gbit Memory Organization 256M x 32 Clock Frequency 933 MHz Voltage Supply 1.2V Operating Temperature -30
MT41K256M16TW-107:P Memory IC Chip 4 Gbit DDR3L SDRAM 16 bit 256 M x 16 FBGA96
MT41K256M16TW-107:P Memory IC Chip 4Gbit DDR3L SDRAM Memory Chip FBGA96 Product Overview MT41K256M16TW-107:P is a 4Gbit DDR3L Synchronous Dynamic Random Access Memory (SDRAM) chip, featuring a low voltage version of DDR3 (1.5V) SDRAM technology. Technical Specifications Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 4Gbit Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz Access Time 20 ns Voltage - Supply 1.283V ~ 1
SDINBDG4-8G Memory IC Chip 8GB iNAND 7250 eMMC Flash Drive with eMMC 5.1 HS400 Interface for Industrial Applications
SDINBDG4-8G Memory IC Chip 8GB iNAND 7250 eMMC 5.1 Flash Drives SDINBDG4-8G is an 8GB iNAND 7250 industrial embedded flash device that delivers high reliability and endurance for industrial applications across a wide range of operational requirements. Product Specifications Specification Details Series iNAND 7250 Package / Case Non-standard Memory Size 8 GB Sequential Read 170 MB/s Sequential Write 300 MB/s Interface Type eMMC 5.1 HS400 Supply Voltage - Min 2.7 V Supply
CXDB3ABAM-MK-A 8Gbit LPDDR4/4X Memory IC Chip with FBGA200 Package
CXDB3ABAM-MK-A Memory IC Chip 8Gbit LPDDR4/4X Memory Chip FBGA200 [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of world-renowned brands. Founded in Shenzhen in 1996, Mingjiada
CAT24C128WI-GT3 Memory IC Chip 128Kbit EEPROM Memory with I2C Interface in SOIC8 Package
CAT24C128WI-GT3 Memory IC Chip 128Kbit EEPROM Memory SOIC8 EEPROM Serial 128Kb I2C Product Overview The CAT24C128WI-GT3 is a 128-Kb EEPROM memory IC organized as 16,384 words of 8 bits each. This device features a 64-byte page write buffer and supports Standard (100 kHz), Fast (400 kHz), and Fast-Plus (1 MHz) I2C protocols. Write operations can be inhibited using the WP pin for full memory protection. On-chip ECC (Error Correction Code) makes this device suitable for high