Slkor MMUN2211
Product Overview This series of NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network (BRT) is designed to replace a single device and its external resistor bias network. Each BRT integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration eliminates the need for individual components, reducing system cost and board space. The devices are housed in the SOT
Product Overview
This series of NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network (BRT) is designed to replace a single device and its external resistor bias network. Each BRT integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration eliminates the need for individual components, reducing system cost and board space. The devices are housed in the SOT-23 package, suitable for low power surface mount applications. The SOT-23 package features modified gull-winged leads that absorb thermal stress during soldering, preventing damage to the die. These devices are available on 8 mm embossed tape and reel.
Advantages
- Simplifies Circuit Design
- Reduces Board Space and Component Count
Application Scenarios
Low power surface mount applications.
Brand
Not explicitly stated, but implied by URL.
Package Type
SOT-23
Transistor Type
NPN Silicon
Network Configuration
Monolithic Bias Resistor Network (BRT)
Resistor Network Components
Series base resistor, Base-emitter resistor
Mounting Type
Surface Mount
Reel Packaging
8 mm embossed tape and reel
| Device Marking | R1 (K) | R2 (K) | Collector-Emitter Breakdown Voltage (V(BR)CEO) | DC Current Gain (hFE) | Collector-Emitter Saturation Voltage (VCE(sat)) | Input Resistor (R1) | Resistor Ratio (R1/R2) |
|---|---|---|---|---|---|---|---|
| MMUN2211 (A8A) | 10 | 10 | 50 Vdc | 35-100 | - 0.25 Vdc | 7.0 k | 1.0 |
| MMUN2212 (A8B) | 22 | 22 | 50 Vdc | 60-160 | - 0.25 Vdc | 15.4 k | 1.0 |
| MMUN2213 (A8C) | 47 | 47 | 50 Vdc | 80-200 | - 0.25 Vdc | 32.9 k | 1.0 |
| MMUN2214 (A8D) | 10 | 47 | 50 Vdc | 80-200 | - 0.25 Vdc | 7.0 k | 0.21 |
| MMUN2215 (A8E) | 10 | 50 Vdc | 160-350 | - 0.25 Vdc | 7.0 k | 0.1 | |
| MMUN2216 (A8F) | 4.7 | 50 Vdc | 160-350 | - 0.25 Vdc | 3.3 k | 0.1 | |
| MMUN2230 (A8G) | 1.0 | 1.0 | 50 Vdc | 3.0-5.0 | - 0.25 Vdc | 0.7 k | 1.0 |
| MMUN2231 (A8H) | 2.2 | 2.2 | 50 Vdc | 8.0-15 | - 0.25 Vdc | 1.5 k | 1.0 |
| MMUN2232 (A8J) | 4.7 | 4.7 | 50 Vdc | 15-30 | - 0.25 Vdc | 3.3 k | 1.0 |
| MMUN2233 (A8K) | 4.7 | 47 | 50 Vdc | 80-200 | - 0.25 Vdc | 3.3 k | 0.1 |
| MMUN2234 (A8L) | 22 | 47 | 50 Vdc | 80-200 | - 0.25 Vdc | 15.4 k | 0.47 |
| MMUN2235 (A8M) | 2.2 | 47 | 50 Vdc | 80-200 | - 0.25 Vdc | 2.2 k | 0.047 |
| MMUN2238 (A8R) | 2.2 | 50 Vdc | 160-350 | - 0.25 Vdc | 2.2 k | 0.185 | |
| MMUN2241 (A8U) | 100 | 50 Vdc | 160-350 | - 0.25 Vdc | 70 k | 0.056 |
| Characteristic | Symbol | Min | Typ | Max | Unit | Condition |
|---|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc | VCB = 50 V, IE = 0 |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc | VCE = 50 V, IB = 0 |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.5 | mAdc | VEB = 6.0 V, IC = 0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc | IC = 10 A, IE = 0 |
| Collector-Emitter Voltage | VCEO | 50 | - | - | Vdc | Note 2. |
| Collector Current | IC | - | - | 100 | mAdc | |
| Total Power Dissipation @ TA = 25C | PD | - | 200 | - | mW | Note 1. |
| Derate above 25C | - | 1.6 | - | mW/C | ||
| Operating and Storage Temperature Range | TJ, Tstg | -65 | - | 150 | C | |
| Maximum Temperature for Soldering Purposes | TL | - | 260 | - | C Sec | Time in Solder Bath |
| Thermal Resistance Junction-to-Ambient (surface mounted) | RJA | - | 625 | - | C/W | |
| Output Voltage (on) | VOL | - | - | 0.2 | Vdc | VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k (and other conditions) |
| Output Voltage (off) | VOH | 4.9 | - | - | Vdc | VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k (and other conditions) |