China Slkor UMC3N for sale
China Slkor UMC3N for sale

Slkor UMC3N

Product OverviewThe DTA114E and DTC114E transistors are NPN and PNP digital transistors respectively, built into a single package. They are ideal for power switch circuits, offering the advantage of cutting mounting cost and area in half. These devices are suitable for various applications requiring compact and efficient switching solutions.MarkingC3Package TypeSOT-353Transistor TypeDual Digital Transistors (NPN+PNP)Model SeriesUMC3NTechnical SpecificationsParameterSymbolMinT

Output Voltage(VO(on)) 300mV
Operating Temperature -
Mfr. Part # UMC3N
Description Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP Pre-Biased (Base-Collector Junction) 100mA 150mW Surface Mount SOT-353
Resistor Ratio 1
Number 1 NPN Pre-Biased, 1 PNP Pre-Biased (Base-Collector Junction)
Product Description

Product Overview

The DTA114E and DTC114E transistors are NPN and PNP digital transistors respectively, built into a single package. They are ideal for power switch circuits, offering the advantage of cutting mounting cost and area in half. These devices are suitable for various applications requiring compact and efficient switching solutions.

Marking

C3

Package Type

SOT-353

Transistor Type

Dual Digital Transistors (NPN+PNP)

Model Series

UMC3N

Technical Specifications

ParameterSymbolMinTypMaxUnitConditions
Input voltage (OFF)VI(off)0.5VVCC=5V ,IO=100A
Input voltage (ON)VI(on)3VVO=0.3V ,IO=10mA
Output voltage (ON)VO(on)0.3VIO/II=10mA/0.5mA
Input currentII0.88mAVI=5V
Output current (OFF)IO(off)0.5AVCC=50V, VI=0
DC current gainGI30VO=5V,IO=5mA
Input resistanceR171013k
Resistance ratioR2/R10.811.2
Transition frequencyfT250MHzVCE=10V ,IE=-5mA,f=100MHz
ParameterSymbolMinTypMaxUnitConditions
Input voltage (OFF)VI(off)-0.5VVCC=-5V ,IO=-100A
Input voltage (ON)VI(on)-3VVO=-0.3V ,IO=-10mA
Output voltage (ON)VO(on)-0.3VIO/II=-10mA/-0.5mA
Input currentII-0.88mAVI=-5V
Output current (OFF)IO(off)-0.5AVCC=-50V, VI=0
DC current gainGI30VO=-5V,IO=-5mA
Input resistanceR171013k
Resistance ratioR2/R10.811.2
Transition frequencyfT250MHzVCE=-10V ,IE=5mA,f=100MHz
ParameterSymbolLimitsUnitConditions
Supply voltageVCC50V
Input voltageVIN-10~+40V
Output currentIO (ICM)100mA
Power dissipationPD150mW
Junction temperatureTj150
Storage temperatureTstg-55~150
ParameterSymbolLimitsUnitConditions
Supply voltageVCC-50V
Input voltageVIN-40~+10V
Output currentIO (ICM)-100mA
Power dissipationPD150mW
Junction temperatureTj150
Storage temperatureTstg-55~150

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