High current rectifier diode MICROCHIP APT60DQ60BG designed for switching in power conversion circuits

Name: High current rectifier diode MICROCHIP APT60DQ60BG designed for switching in power conversion circuits
Brand: Hefei Purple Horn E-Commerce Co., Ltd.

Product OverviewThe APT60DQ60BG is an ultra-fast soft recovery rectifier diode featuring fast switching speeds, low forward voltage, and low leakage current. It is designed for high-frequency applications, offering benefits such as reduced switching losses, lower EMI, and improved system reliability. This AEC-Q101 qualified device is suitable for various power electronics applications including PFC, inverters, SMPS, and bridge circuits.Product AttributesBrand: MicrosemiCertif

Voltage - Forward(Vf@If) 2.4V@60A

Non-Repetitive Peak Forward Surge Current 600A

Mfr. Part # APT60DQ60BG

Description 600A 35ns 600V 2.4V@60A 60A TO-247-2 Single Diodes RoHS

Reverse Recovery Time (trr) 35ns

Operating Junction Temperature Range -55℃~+175℃

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Product Description

Product Overview

The APT60DQ60BG is an ultra-fast soft recovery rectifier diode featuring fast switching speeds, low forward voltage, and low leakage current. It is designed for high-frequency applications, offering benefits such as reduced switching losses, lower EMI, and improved system reliability. This AEC-Q101 qualified device is suitable for various power electronics applications including PFC, inverters, SMPS, and bridge circuits.

Product Attributes

Brand: Microsemi
Certifications: AEC-Q101 qualified, RoHS compliant
Package: TO-247

Technical Specifications

Parameter	Symbol	Rating	Unit	Conditions
Maximum DC reverse voltage	VR	600	V
Maximum peak repetitive reverse voltage	VRRM	600	V
Maximum working peak reverse voltage	VRWM	600	V
Maximum average forward current	IF(AV)	60	A	T_C = 110 C, duty cycle = 0.5
RMS forward current	IF(RMS)	94	A	square wave, 50% duty
Non-repetitive forward surge current	IFSM	600	A	T_A = 45 C, 8.3 ms
Avalanche energy	EAVL	20	mJ	1 A, 40 mH
Operating and storage temperature range	T_J, T_STG	55 to 175	C
Lead temperature for 10 seconds	T_L	300	C
Junction-to-case thermal resistance	R_JC	0.44	C/W
Forward Voltage	V_F	2.0 - 2.4	V	I_F = 60 A
Forward Voltage	V_F	2.44	V	I_F = 120 A
Forward Voltage	V_F	1.7	V	I_F = 60 A, T_J = 125 C
Maximum reverse leakage current	I_RM	25	A	V_R = 600 V
Maximum reverse leakage current	I_RM	500	A	V_R = 600 V, T_J = 125 C
Junction capacitance	C_J	75	pF	V_R = 200 V
Reverse recovery time	t_rr	26	ns	I_F = 1 A, di_F/dt = 100 A/s, V_R = 30 V, T_J = 25 C
Reverse recovery time	t_rr	35	ns	I_F = 60 A, di_F/dt = 200 A/s, V_R = 400 V, T_J = 25 C
Reverse recovery charge	Q_rr	45	nC	I_F = 60 A, di_F/dt = 200 A/s, V_R = 400 V, T_J = 25 C
Maximum reverse recovery current	I_RRM	4	A	I_F = 60 A, di_F/dt = 200 A/s, V_R = 400 V, T_J = 25 C
Reverse recovery time	t_rr	175	ns	I_F = 60 A, di_F/dt = 200 A/s, V_R = 400 V, T_J = 125 C
Reverse recovery charge	Q_rr	680	nC	I_F = 60 A, di_F/dt = 200 A/s, V_R = 400 V, T_J = 125 C
Maximum reverse recovery current	I_RRM	8	A	I_F = 60 A, di_F/dt = 200 A/s, V_R = 400 V, T_J = 125 C
Reverse recovery time	t_rr	100	ns	I_F = 60 A, di_F/dt = 1000 A/s, V_R = 400 V, T_J = 125 C
Reverse recovery charge	Q_rr	1380	nC	I_F = 60 A, di_F/dt = 1000 A/s, V_R = 400 V, T_J = 125 C
Maximum reverse recovery current	I_RRM	26	A	I_F = 60 A, di_F/dt = 1000 A/s, V_R = 400 V, T_J = 125 C