Power Conversion Bridge Rectifier HANGYU MICROELECTRONICS GBL810 with 1000V Reverse Voltage Capacity
Product OverviewThe GBL801-GBL810 series are single-phase silicon bridge rectifiers designed for efficient power conversion. They offer a reverse voltage range of 50V to 1000V and a forward current of 8.0A. Key features include low reverse leakage, high forward surge capability, high reliability, and glass-passivated chips. The lead and body comply with RoHS standards, making them suitable for various electronic applications requiring robust rectification.Product AttributesBr
Product Overview
The GBL801-GBL810 series are single-phase silicon bridge rectifiers designed for efficient power conversion. They offer a reverse voltage range of 50V to 1000V and a forward current of 8.0A. Key features include low reverse leakage, high forward surge capability, high reliability, and glass-passivated chips. The lead and body comply with RoHS standards, making them suitable for various electronic applications requiring robust rectification.
Product Attributes
- Brand: GBL (implied by model numbers)
- Origin: China (implied by language)
- Material: Silicon, Epoxy (UL 94V-0), Tin-plated lead
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | GBL801 | GBL802 | GBL803 | GBL804 | GBL805 | GBL806 | GBL810 | Unit |
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum average forward rectified current | IF(AV) | 8.0 | A | ||||||
| Non-repetitive peak forward surge current 8.3 ms single half sine-wave | IFSM | 150 | A | ||||||
| Current squared time t 10 ms | I2t | 4.2 | AS | ||||||
| Operating junction temperature | TJ | 150 | |||||||
| Storage temperature range | TSTG | -55 to +150 | |||||||
| Typical thermal resistance (Junction to Case) | RJC | 1.4 | /W | ||||||
| Typical thermal resistance (Junction to Ambient) | RJA | 22 | /W | ||||||
| Dielectric strength Terminals to case | Vdis | 110 | V | ||||||
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