China Electronic transistor High Diode S9015 designed for integration in surface mount technology circuits for sale
China Electronic transistor High Diode S9015 designed for integration in surface mount technology circuits for sale

Electronic transistor High Diode S9015 designed for integration in surface mount technology circuits

Product OverviewThe S9015 is a high-quality NPN transistor from High Diode Semiconductor, designed for general-purpose applications. It offers reliable performance with key electrical characteristics like a collector-emitter voltage of -45V and a collector current of -100mA. Packaged in a compact SOT-23 surface-mount package, it is suitable for various electronic circuits.Product AttributesBrand: High Diode SemiconductorOrigin: SemiconductorPackage Type: SOT-23Complementary

Operating Temperature -
Transition frequency(fT) 150MHz
Collector - Emitter Voltage VCEO 45V
Description Bipolar (BJT) Transistor PNP 45V 100mA 150MHz 200mW Surface Mount SOT-23
Emitter-Base Voltage(Vebo) 5V
type PNP
Product Description

Product Overview

The S9015 is a high-quality NPN transistor from High Diode Semiconductor, designed for general-purpose applications. It offers reliable performance with key electrical characteristics like a collector-emitter voltage of -45V and a collector current of -100mA. Packaged in a compact SOT-23 surface-mount package, it is suitable for various electronic circuits.

Product Attributes

  • Brand: High Diode Semiconductor
  • Origin: Semiconductor
  • Package Type: SOT-23
  • Complementary to: S9014
  • Marking: M6, M7

Technical Specifications

SymbolParameterTest ConditionsMinTypMaxUnit
VCEOCollector-Emitter Voltage-45V
ICCollector Current-100mA
PCCollector Power Dissipation200mW
hFEDC Current GainVCE=-5V, IC=-1mA2001000
VCE(sat)Collector-Emitter Saturation VoltageIC=-100mA, IB=-10mA-0.3V
VBE(sat)Base-Emitter Saturation VoltageIC=-100mA, IB=-10mA-1V
fTTransition FrequencyVCE=-5V, IC=-10mA, f=30MHz150MHz
ICBOCollector Cut-off CurrentVCB=-50V, IE=0-0.1A
IEBOEmitter Cut-off CurrentVEB=-5V, IC=0-0.1A
TjJunction Temperature150
TstgStorage Temperature-55+150

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