China Versatile plastic surface mounted NPN transistor CBI BC847A suitable for automatic insertion tasks for sale
China Versatile plastic surface mounted NPN transistor CBI BC847A suitable for automatic insertion tasks for sale

Versatile plastic surface mounted NPN transistor CBI BC847A suitable for automatic insertion tasks

Product Overview This NPN transistor is ideally suited for automatic insertion, making it a versatile component for switching and AF amplifier applications. It offers reliable performance across various electrical characteristics, including breakdown voltages, current gains, and saturation voltages, within the SOT-23 package. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Material: Plastic surface mounted package Pin

Operating Temperature -
Mfr. Part # BC847A
Transition frequency(fT) 100MHz
Collector - Emitter Voltage VCEO 65V
Description Bipolar (BJT) Transistor NPN 65V 0.1A 100MHz 200mW Surface Mount SOT-23
Current - Collector(Ic) 100mA
Product Description

Product Overview

This NPN transistor is ideally suited for automatic insertion, making it a versatile component for switching and AF amplifier applications. It offers reliable performance across various electrical characteristics, including breakdown voltages, current gains, and saturation voltages, within the SOT-23 package.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-23
  • Material: Plastic surface mounted package
  • Pin Configuration: 1. BASE, 2. EMITTER, 3. COLLECTOR

Technical Specifications

Parameter Symbol Test Conditions BC846 BC847 BC848 Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage VCBO 80 50 30 V
Collector-Emitter Voltage VCEO 65 45 30 V
Emitter-Base Voltage VEBO 6 V
Collector Current Continuous IC 0.1 A
Collector Power Dissipation PC* 200 mW
Junction Temperature TJ 150
Storage Temperature Tstg -65-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage VCBO IC= 10A, IE=0 80 50 30 V
Collector-emitter breakdown voltage VCEO IC= 10mA, IB=0 65 45 30 V
Emitter-base breakdown voltage VEBO IE= 10A, IC=0 6 V
Collector cut-off current ICBO VCB=70 V , IE=0 0.1 A
VCB=50 V , IE=0 0.1
VCB=30 V , IE=0 0.1
Collector cut-off current ICEO VCE=60 V , IB=0 0.1 A
VCE=45 V , IB=0 0.1
VCE=30 V , IB=0 0.1
Emitter cut-off current IEBO VEB=5 V , IC=0 0.1 A
DC current gain hFE VCE= 5V, IC= 2mA 110-200 (BC846A,847A,848A)
220-450 (BC846B,847B,848B)
420-800 (BC847C,BC848C)
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 5mA 1.1 V
Transition frequency fT VCE= 5 V, IC= 10mA, f=100MHz 100 MHz
Collector output capacitance Cob VCB=10V, f=1MHz 4.5 pF

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