AlN / Al2O3 Ceramic Semiconductor Package For Power Device RF Module Encapsulation
Ceramic Semiconductor Package | High Thermal Conductivity AlN/Al2O3 for Power Device (IGBT, MOSFET) & RF Module Encapsulation High-performance ceramic semiconductor packages featuring exceptional thermal conductivity using AlN (Aluminum Nitride) and Al₂O₃ (Aluminum Oxide) materials. Engineered for superior heat dissipation and reliable performance in demanding electronic applications. Key Features Exceptional thermal conductivity for efficient heat management Available in AlN
Corrosion Resistance
Excellent
Place of Origin
Hunan, China
Customization
Size, tolerance, diameter, thickness,holes, metallization optional
Packaging Details
Carton; Pallet
Color
White / Black / Customized
Purity
≥94% / ≥95% (custom grades available)
Product Description
Ceramic Semiconductor Package | High Thermal Conductivity AlN/Al2O3 for Power Device (IGBT, MOSFET) & RF Module Encapsulation
High-performance ceramic semiconductor packages featuring exceptional thermal conductivity using AlN (Aluminum Nitride) and Al₂O₃ (Aluminum Oxide) materials. Engineered for superior heat dissipation and reliable performance in demanding electronic applications.
Key Features
- Exceptional thermal conductivity for efficient heat management
- Available in AlN and Al₂O₃ ceramic formulations
- Superior electrical insulation properties
- Excellent mechanical strength and durability
- High temperature stability and reliability
- Precision manufacturing for consistent performance
Primary Applications
- Power Device Encapsulation (IGBT, MOSFET)
- RF Module Packaging and Protection
- High-power semiconductor devices
- Advanced electronic systems requiring thermal management
- Industrial power electronics
- Telecommunications equipment
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