China 2N3866 NPN RF Transistor 30V 400mA 500MHz TO-39 Package for High-Frequency Amplification for sale
China 2N3866 NPN RF Transistor 30V 400mA 500MHz TO-39 Package for High-Frequency Amplification for sale

2N3866 NPN RF Transistor 30V 400mA 500MHz TO-39 Package for High-Frequency Amplification

High-performance NPN RF transistor with 30V voltage rating, 400mA current capacity, and 500MHz frequency range. TO-39 metal package provides excellent thermal performance for RF amplifiers, oscillators, and communication systems. 5W power dissipation ensures reliable operation in demanding applications.

Operating Temperature -65°C ~ 200°C (TJ)
Category Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar RF Transistors
Description RF TRANS NPN 30V 500MHZ TO39
Frequency - Transition 500MHz
Current - Collector (Ic) (Max) 400mA
Mounting Type Through Hole
Product Description
Product Overview

The 2N3866 is a high-performance NPN RF transistor designed for demanding radio frequency applications. This through-hole TO-39 packaged device delivers reliable operation in amplification and oscillator circuits up to 500MHz.

Key Specifications
Parameter Value
Transistor Type NPN RF Bipolar
Maximum Collector-Emitter Voltage 30V
Maximum Collector Current 400mA
Frequency Range Up to 500MHz
Power Dissipation 5W
Package Type TO-39 Through Hole
Key Features
  • High-frequency operation up to 500MHz for RF applications
  • Robust 30V voltage rating and 400mA current handling
  • 5W power dissipation capability for demanding circuits
  • TO-39 metal package for excellent thermal performance
  • Through-hole design for reliable PCB mounting
Applications

Ideal for RF amplifiers, oscillators, transmitters, communication systems, and high-frequency signal processing circuits in industrial and commercial electronics.

Package Information

Supplied in tray packaging for automated assembly processes and bulk handling requirements.

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