IKD06N60RA 600V 6A IGBT Transistor - TO-252 Package by Infineon Technologies
High-performance IGBT transistor with 600V collector-emitter voltage and 6A current rating. Features Infineon's TrenchStop™ technology for efficient switching, low saturation voltage, and excellent thermal performance. Ideal for motor drives, UPS systems, and industrial power applications. Original Infineon components with competitive global pricing.
The IKD06N60RA is a high-performance IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies, designed for industrial power electronics applications requiring reliable switching performance and thermal stability.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 600V |
| Collector Current (IC) | 6A |
| Package Type | TO-252 (DPAK) |
| Technology | TrenchStop™ IGBT |
- Low saturation voltage for improved efficiency
- Fast switching capability for high-frequency applications
- Excellent thermal performance and reliability
- Optimized for motor drives, UPS systems, and power supplies
- Robust short-circuit capability
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