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China IRGP20B120UD-EP IGBT Transistor 1200V 20A TO-247 Package with Integrated Diode for sale

IRGP20B120UD-EP IGBT Transistor 1200V 20A TO-247 Package with Integrated Diode

Name: IRGP20B120UD-EP IGBT Transistor 1200V 20A TO-247 Package with Integrated Diode
Brand: UDEL Chips Tech Co., Ltd.

High-performance 1200V 20A IGBT transistor from Infineon Technologies featuring fast switching, low saturation voltage, and integrated free-wheeling diode. Ideal for industrial motor drives, power supplies, and UPS systems. Available with competitive global pricing on original components.

Manufacturer : Infineon Technologies

Description IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT

Packaging : Tube

Maximum Operating Temperature : + 150 C

Maximum Gate Emitter Voltage : +/- 20 V

Package / Case : TO-247-3

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Product Description

IRGP20B120UD-EP IGBT Transistor

The IRGP20B120UD-EP from Infineon Technologies is a high-performance IGBT transistor designed for demanding industrial applications requiring robust performance and reliability.

Key Specifications

Parameter	Value
Collector-Emitter Voltage (V_CES)	1200V
Collector Current (I_C)	20A
Package Type	TO-247
Technology	IGBT with Diode

Product Features

High voltage capability with 1200V rating
Robust 20A current handling capacity
Low saturation voltage for improved efficiency
Fast switching characteristics
Integrated free-wheeling diode
Enhanced performance (EP) version

Applications

Ideal for motor drives, power supplies, UPS systems, welding equipment, and industrial automation applications where high power switching reliability is essential.

Pricing & Availability

We offer competitive global pricing on original, new components. For detailed pricing information or to request a custom quote, please contact us through our online chat or submit a quote request directly.