2N2222A
Bipolar (BJT) Transistor Array 40V 800mA 1.2W Through Hole TO-18
Operating Temperature
-65°C ~ 200°C (TJ)
Category
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Description
NPN SIL TRANS TO18
Current - Collector (Ic) (Max)
800mA
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Mounting Type
Through Hole
Product Description
Bipolar (BJT) Transistor Array 40V 800mA 1.2W Through Hole TO-18
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