BSM120D12P2C005
Operating Temperature
-40°C ~ 150°C (TJ)
FET Feature
Silicon Carbide (SiC)
Description
MOSFET 2N-CH 1200V 120A MODULE
FET Type
2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds
14000pF @ 10V
Product Status
Active
Product Description
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