EPC2102
Operating Temperature
-40°C ~ 150°C (TJ)
FET Feature
GaNFET (Gallium Nitride)
Description
GAN TRANS SYMMETRICAL HALF BRIDG
FET Type
2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds
830pF @ 30V
Gate Charge (Qg) (Max) @ Vgs
6.8nC @ 5V
Product Description
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