China ESD Array Low Capacitance ESD Protection 3.3V Operating Voltage DFN1006 for sale
China ESD Array Low Capacitance ESD Protection 3.3V Operating Voltage DFN1006 for sale
China ESD Array Low Capacitance ESD Protection 3.3V Operating Voltage DFN1006 for sale
China ESD Array Low Capacitance ESD Protection 3.3V Operating Voltage DFN1006 for sale
China ESD Array Low Capacitance ESD Protection 3.3V Operating Voltage DFN1006 for sale
China ESD Array Low Capacitance ESD Protection 3.3V Operating Voltage DFN1006 for sale
China ESD Array Low Capacitance ESD Protection 3.3V Operating Voltage DFN1006 for sale

ESD Array Low Capacitance ESD Protection 3.3V Operating Voltage DFN1006

Low capacitance ESD array with 3.3V operating voltage, nA leakage, and extremely low clamping. Ideal for cellular handsets, USB ports, and RF circuits. RoHS compliant, DFN1006 package. Custom options available.

Place of Origin Shenzhen Guangdong China
Vbr (Min.) 5.0V
Vc (Typ.) (Ipp=1A) 9.0V
Component Name ESD Arrays
Vrwm (Max.) 3.3V
Vbr (Max.) 6.5V
Product Description

Low Capacitance ESD Arrays for ESD Protection SE03N6L01GZ Operating Voltage 3.3V

 
ESD Arrays DATASHEET:  SE03N6L01GZ_v2204.1.pdf
 
 
ESD Arrays Features:

  • Operating Voltage: 3.3V
  • Low Leakage: nA Level
  • Low Capacitance
  • Extremely-Low Clamping Voltage
  • RoHS compliant

 

ESD Arrays Applications:

  • Cellular Handsets & Accessories
  • Digital Visual Interface (DVI)
  • RF Circuits
  • Display Port
  • USB Ports
  • MDDI Ports
  • PCI Express

 

ESD Arrays Mechanical Characteristics:

  • DFN1006 (1.0x0.6x0.5mm) Package
  • Weight 0.5 Milligrams (Approximate)
  • Quantity Per Reel : 10,000pcs
  • Reel Size : 7 inch
  • Lead Finish : Lead Free

 

ESD Arrays Functional Diagram:

 

 

ESD Arrays Absolute Maximum Ratings (TA=25℃ unless otherwise specified):

 
Symbol Parameter Value Units
TL Lead Soldering Temperature 260 (10sec) ºC
TOP Operating Temperature Range -55 to +125
TSTG Storage Temperature Range -55 to +150
VESD ESD per IEC61000-4-2 (Air) ±25 kV
  ESD per IEC61000-4-2 (Contact) ±25  

 

 

 

Electrical Characteristics (TA = 25℃ unless otherwise specified):

Parameter Symbol Conditions Min. Typ. Max. Units
Reverse Working Voltage VRWM -- -- -- 3.3 V
Breakdown Voltage VBR IT = 1mA 5.0 -- 6.5 V
Leakage Current IR VRWM = 3.3V -- -- 1.0 μA
Clamping Voltage VC IPP = 1A ,tP = 8/20μs -- 9.0 -- V
Clamping Voltage VC IPP = 5A , tP = 8/20μs -- 19.0 -- V
Junction Capacitance CJ VR = 0V, f = 1MHz -- 0.4 -- pF

 

 

 

ESD Arrays Characteristic Curves:

Fig1. 8/20 us Pulse Waveform

 

Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)

 

DFN1006-2L Package Outline & Dimensions:

Symbol Millimeters Inches
  Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.010 0.070 0.000 0.003
D 0.950 1.050 0.037 0.041
E 0.550 0.650 0.022 0.026
D1 0.450 REF 0.018 REF
E1 0.400 REF 0.016 REF
b 0.275 0.325 0.011 0.013
e 0.675 0.725 0.027 0.029
L 0.275 0.325 0.011 0.013
L1 0.010 REF 0.000 REF

 

 

Interested in this product?
Contact us now for more details and a custom quote.