L603C
Bipolar (BJT) Transistor Array 8 NPN Darlington 90V 400mA 1.8W Through Hole 18-DIP
Operating Temperature
-25°C ~ 150°C (TJ)
Category
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Description
TRANS 8NPN DARL 90V 0.4A 18DIP
Frequency - Transition
-
Current - Collector (Ic) (Max)
400mA
Vce Saturation (Max) @ Ib, Ic
2V @ 500µA, 300mA
Product Description
Bipolar (BJT) Transistor Array 8 NPN Darlington 90V 400mA 1.8W Through Hole 18-DIP
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