CAT28C64BG-12T 64Kbit EEPROM Memory IC 8K x 8 Parallel 120ns 5V 32-PLCC
High-performance 64Kbit parallel EEPROM with 120ns access time and 5V operation. Features 100,000 program/erase cycles, 100-year data retention, hardware/software write protection, and industrial temperature range. Ideal for reliable non-volatile memory applications requiring fast read/write operations.
The CAT28C64BG-12T is a high-performance 64Kbit parallel EEPROM memory IC manufactured by onsemi. This 5V-only CMOS flash memory chip features fast access times, low power consumption, and robust write protection mechanisms, making it ideal for industrial and commercial applications requiring reliable non-volatile data storage.
- 64Kbit memory capacity organized as 8K x 8-bit
- 120ns fast read access time for high-speed operations
- Low power consumption: 25mA active, 100µA standby
- 5ms maximum write cycle time with self-timed programming
- Hardware and software write protection for data security
- Automatic page write operation: 1 to 32 bytes in 5ms
- Endurance: 100,000 program/erase cycles
- Data retention: 100 years
- Operating voltage: 4.5V to 5.5V
- Operating temperature: 0°C to 70°C
| Attribute | Value |
|---|---|
| Manufacturer | onsemi |
| Product Category | Memory ICs |
| Package Type | 32-PLCC (11.43x13.97mm) |
| Memory Type | EEPROM |
| Memory Format | Parallel EEPROM |
| Interface | Parallel |
| Voltage Supply | 4.5V - 5.5V |
| Operating Temperature | 0°C - 70°C |
Manufactured using Catalyst's advanced CMOS floating gate technology, this EEPROM features on-chip address and data latches, self-timed write cycle with auto-clear, and VCC power up/down write protection. The device includes DATA Polling and Toggle status bits for precise write cycle monitoring and is available in JEDEC-approved packaging for industrial applications.
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