China PNP Silicon Transistor BC856BLT3G -100mA 310mW General Purpose Switching for sale
China PNP Silicon Transistor BC856BLT3G -100mA 310mW General Purpose Switching for sale

PNP Silicon Transistor BC856BLT3G -100mA 310mW General Purpose Switching

BC856BLT3G PNP transistor for switching and amplifier applications. Features -100mA collector current, 310mW power dissipation, and low noise. Suitable for automatic insertion in thick and thin-film circuits. Complement to BC846 series.

Emitter-Base Voltage -5V
Collector Power Dissipation 310 mW
Place of Origin Original
Description Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)
Collector-Emitter Voltage -65V
Packaging Details please contact me for details
Product Description

BC856/857/858/859/860

 

Switching and Amplifier Applications

• Suitable for automatic insertion in thick and thin-film circuits

• Low Noise: BC859, BC860

• Complement to BC846 ... BC850

 

 

Typical Characteristics

 

 

Symbol 
 

Parameter  Value  Units
VEBO  Emitter-Base Voltage  -5  V
IC Collector Current (DC)  -100  mA
PC  Collector Power Dissipation 310  mW
T Junction Temperature  150  °C

 

 

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