PNP Silicon Transistor BC856BLT3G -100mA 310mW General Purpose Switching
BC856BLT3G PNP transistor for switching and amplifier applications. Features -100mA collector current, 310mW power dissipation, and low noise. Suitable for automatic insertion in thick and thin-film circuits. Complement to BC846 series.
Emitter-Base Voltage
-5V
Collector Power Dissipation
310 mW
Place of Origin
Original
Description
Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)
Collector-Emitter Voltage
-65V
Packaging Details
please contact me for details
Product Description
BC856/857/858/859/860
Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
Typical Characteristics
|
Symbol |
Parameter | Value | Units |
| VEBO | Emitter-Base Voltage | -5 | V |
| IC | Collector Current (DC) | -100 | mA |
| PC | Collector Power Dissipation | 310 | mW |
| TJ | Junction Temperature | 150 | °C |
Recommended Products
Price: To be negotiated
Price: To be negotiated
Price: Negotiation
Price: To be negotiated
Price: To be negotiated
Price: To be negotiated
Interested in this product?
Contact us now for more details and a custom quote.