China MUR420RLG Ultrafast Switching Diode 4A 200V 25ns DO-201AD Power Rectifier for sale
China MUR420RLG Ultrafast Switching Diode 4A 200V 25ns DO-201AD Power Rectifier for sale

MUR420RLG Ultrafast Switching Diode 4A 200V 25ns DO-201AD Power Rectifier

MUR420RLG is a 4A, 200V ultrafast switching diode with 25ns recovery time. Features low forward voltage, high temperature glass passivated junction, and 175°C operating temperature. Ideal for switching power supplies and inverters. Pb-free and available in tape and reel.

Place of Origin original factory
Description Diode 200 V 4A Through Hole Axial
Packaging Details Please contact me for details
Reverse Voltage 600 V
Model Number MUR420RLG
Supply Ability 9500pcs
Product Description

 

MUR420RLG High Speed Switching Diode Switchmode Tm Power Rectifiers

 

ULTRAFAST RECTIFIERS

4.0 AMPERES, 50−600 VOLTS

 

These state−of−the−art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes.

 

Features

• Ultrafast 25 ns, 50 ns and 75 ns Recovery Times

• 175°C Operating Junction Temperature

• Low Forward Voltage

• Low Leakage Current

• High Temperature Glass Passivated Junction

• Reverse Voltage to 600 V

• Shipped in Plastic Bags, 500 per Bag

• Available in Tape and Reel, 1500 per Reel, by Adding a “RL’’ Suffix to the Part Number

• Pb−Free Packages are Available*

 

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 1.1 Gram (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

• Polarity: Cathode indicated by Polarity Band

 

MAXIMUM RATINGS

Rating Symbol MUR Unit
405 410 415 420 440 460

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

50 100 150 200 400 600 V

Average Rectified Forward Current (Square Wave)

(Mounting Method #3 Per Note 2)

IF(AV) 4.0 @ TA = 80°C

4.0 @

TA = 40°C

A

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions, half wave, single phase, 60 Hz)

IFSM 125 110 A
Operating Junction Temperature & Storage Temperature TJ, Tstg -65 to +175 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

 

MARKING DIAGRAM

 

 

PACKAGE DIMENSIONS

AXIAL LEAD

CASE 267−05

(DO−201AD)

ISSUE G

 

 

 

 

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