DPC technology (Direct Plated Copper)
DPC technology (Direct Plated Copper) Stapes of the technological process: 1. Formation of a thin continuous film of conductive material on a ceramic substrate. In this case, there may be holes in the substrate; 2. Applying a photoresist to the formed conductive layer; 3. Exposure and manifestation of photoresist; 4. Galvanic build-up of copper metallization of the required thickness; 5. Application of Ni-Au finish coating; 6. Removing the photoresist from the surface of the
DPC technology (Direct Plated Copper)
Stapes of the technological process:
1. Formation of a thin continuous film of conductive material on a ceramic substrate. In this case, there may be holes in the substrate;
2. Applying a photoresist to the formed conductive layer;
3. Exposure and manifestation of photoresist;
4. Galvanic build-up of copper metallization of the required thickness;
5. Application of Ni-Au finish coating;
6. Removing the photoresist from the surface of the board;
7. Chemical etching of the conductive layer remaining on the ceramic after removing the photoresist.
Specifications
|
Properties |
Thick-film technology |
DPC |
|
Tolerance |
± 10% |
± 1% |
|
Adhesion |
high |
high |
|
Surface roughness Ra, mkm |
от 1 до 3 |
≤ 0,3 |
| Pages |
Technology comparance (the 5 - the best items, the 1 - the lowest items)
|
Properties |
DPC |
Thin- film technology |
Thick-film technology |
|
Electrical conductivity |
5 |
3 |
4 |
|
Thermal conductivity |
5 |
3 |
4 |
|
Stability of parameters |
5 |
5 |
3 |
|
Resolution |
4..5 (определяется толщиной медного слоя) |
5 |
2 |
|
Cost |
5 |
2 |
2 |
| Ceramics |
Thickness, mkm |
Conductive material of the transition holes |
Tolerance for the width of the conductor, microns |
||
|
Cu |
Ni |
Au |
|||
|
Al2O3 |
1... 100 |
3 ... 5 |
0,075... 1 |
Ag, Cu |
50 |
|
AlN |
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An equally important characteristic that determines the durability of products is the resistance of the metallized board to temperature effects. Thermal cycling testing was carried out according to MIL-STD-202.107G. This method is designed to determine the stability of a ceramic substrate with metallization to a cyclic temperature change.
Test conditions:
- -400C (30 min)~1250 oC (30 min), 500 cycles;
- adhesion measurement method: bursting machine;
- conditions: adhesion ≥ 3 kg.
Test results
|
№ |
Value, кг |
Results |
№ |
Value, кг |
Results |
|
1 |
3,84 |
+ |
6 |
3,94 |
+ |
|
2 |
3,92 |
+ |
7 |
4,11 |
+ |
|
3 |
4,02 |
+ |
8 |
3,51 |
+ |
|
4 |
3,76 |
+ |
9 |
3,87 |
+ |
|
5 |
3,58 |
+ |
10 |
4,01 |
+ |
|
Average adhesion value, кг: 3,86 ± 0,18 |
|||||
Application area
- solar collectors;
- power electronics:
- power integrated circuits;
- thermoelectric coolers and generators;
- microwave appliances;
- Microwave devices;
- LED leds.
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