Sic Based UV Photodiode SG01D-5lens

SG01D-5LENS Concentrator lens SiC based UV photodiode Avirtual = 11.0 mm2 GeneraL Features Properties of the SG01D-5LENS UV photodiode • Broadband UVA+UVB+UVC, PTB reported high chip stability, for very weak radiation • Radiation sensitive area A = 11.0 mm2 • TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin • 10μW/cm2 peak radiation results a current of approx. 350 nA About the material Silicon Carbide (SiC) SiC provides the unique