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JUYI N Channel High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application

    Buy cheap JUYI N Channel High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application from wholesalers
     
    Buy cheap JUYI N Channel High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application from wholesalers
    • Buy cheap JUYI N Channel High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application from wholesalers
    • Buy cheap JUYI N Channel High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application from wholesalers

    JUYI N Channel High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application

    Ask Lasest Price
    Brand Name : JUYI
    Model Number : JY11M
    Price : Negotiable
    Delivery Time : 5-10 days
    Payment Terms : T/T,L/C,Paypal
    Supply Ability : 1000sets/day
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    JUYI N Channel High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application


    JY11M N Channel Enhancement Mode Power MOSFET


    GENERAL DESCRIPTION


    The JY11M utilizes the latest trench processing techniques to achieve the high cell
    density and reduces the on-resistance with high repetitive avalanche rating. These
    features combine to make this design an extremely efficient and reliable device for
    use in power switching application and a wide variety of other applications.


    FEATURES


    ● 100V/110A, RDS(ON) =6.5mΩ@VGS=10V
    ● Fast switching and reverse body recovery
    ● Fully characterized avalanche voltage and current
    ● Excellent package for good heat dissipation


    APPLICATIONS
    ● Switching application
    ● Hard switched and high frequency circuits
    ● Power Management for Inverter Systems


    Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)

    SymbolParameterLimitUnit
    VDSDrain-Source Voltage100V
    VGSGate-Source Voltage± 20V
    IDContinuous Drain
    Current
    Tc=25ºC110A
    Tc=100ºC82
    IDMPulsed Drain Current395A
    PDMaximum Power Dissipation210W
    TJ TSTGOperating Junction and Storage Temperature
    Range
    -55 to +175ºC
    RθJCThermal Resistance-Junction to Case0.65ºC/W
    RθJAThermal Resistance-Junction to Ambient62


    Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)

    SymbolParameterConditionsMinTypMaxUnit
    Static Characteristics
    BVDSSDrain-Source
    Breakdown Voltage
    VGS=0V,IDS=250uA100V
    IDSSZero Gate Voltage
    Drain Current
    VDS=100V,VGS=0V1uA
    IGSSGate-Body Leakage
    Current
    VGS=± 20V,VDS=0V± 100nA
    VGS(th)Gate Threshold
    Voltage
    VDS= VGS, IDS=250uA2.03.04.0V
    RDS(ON)Drain-Source
    On-state Resistance
    VGS=10V,IDS=40A6.5
    gFSForward
    Transconductance
    VDS=50V, IDS=40A100S




    DOWNLOAD JY11M USER MANUAL

    JY11M.pdf


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