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Scientists demonstrate method for integrating nanowire devices

Scientists demonstrate method for integrating nanowire devices

Last Updated: July 22, 2008: 2:32 pm http://www.physorg.com/news129483596.html

Tag : silicon oxide

Spearheaded by graduate student Mariano Zimmler and FedericoCapasso, Robert L. Wallace Professor of Applied Physics and VintonHayes Senior Research Fellow in Electrical Engineering, both ofHarvard's School of Engineering and Applied Sciences (SEAS), andProf. Carsten Ronning of the University of Jena, the findings willbe published in Nano Letters . The researchers have filed for U.S. patents covering theirinvention.

While semiconductor nanowires---rods with an approximate diameterof one-thousandth the width of a human hair---can be easilysynthesized in large quantities using inexpensive chemical methods,reliable and controlled strategies for assembling them intofunctional circuits have posed a major challenge. By incorporatingspin-on glass technology, used in Silicon integrated circuitsmanufacturing, and photolithography, transferring a circuit patternonto a substrate with light, the team demonstrated a reproducible,high-volume, and low-cost fabrication method for integratingnanowire devices directly onto silicon.

"Because our fabrication technique is independent of thegeometrical arrangement of the nanowires on the substrate, weenvision further combining the process with one of the severalmethods already developed for the controlled placement andalignment of nanowires over large areas," said Capasso. "We believethe marriage of these processes will soon provide the necessarycontrol to enable integrated nanowire photonic circuits in astandard manufacturing setting."

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